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GS84018 Datasheet(PDF) 16 Page - GSI Technology

Part # GS84018
Description  256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
PDF  31 Pages
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Manufacturer  GSI [GSI Technology]
Direct Link  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS84018 Datasheet(HTML) 16 Page - GSI Technology

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Rev: 1.12 7/2002
16/31
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
Preliminary
GS84018/32/36AT/B-180/166/150/100
Note: This parameter is sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4.
For x18 configuration, consult factory.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 3.3 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD = 3.3 V
34
pF
Input Capacitance
CIN
VIN = 0 V
45
pF
Output Capacitance
COUT
VOUT = 0 V
67
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max
BGA Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
38
°C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
RΘJA
24
21
°C/W
1,2,4
Junction to Case (TOP)
RΘJC
95
°C/W
3,4
20% tKC
VSS-2.0V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD+-2.0V
50%
VDD
VIL



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