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GS84018 Datasheet(PDF) 16 Page - GSI Technology |
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GS84018 Datasheet(HTML) 16 Page - GSI Technology |
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16 / 31 page ![]() Rev: 1.12 7/2002 16/31 © 1999, Giga Semiconductor, Inc. Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com Preliminary GS84018/32/36AT/B-180/166/150/100 Note: This parameter is sample tested. Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper- ature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87. 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1. 4. For x18 configuration, consult factory. Capacitance (TA = 25oC, f = 1 MHZ, VDD = 3.3 V) Parameter Symbol Test conditions Typ. Max. Unit Control Input Capacitance CI VDD = 3.3 V 34 pF Input Capacitance CIN VIN = 0 V 45 pF Output Capacitance COUT VOUT = 0 V 67 pF Package Thermal Characteristics Rating Layer Board Symbol TQFP Max BGA Max Unit Notes Junction to Ambient (at 200 lfm) single RΘJA 40 38 °C/W 1,2,4 Junction to Ambient (at 200 lfm) four RΘJA 24 21 °C/W 1,2,4 Junction to Case (TOP) RΘJC 95 °C/W 3,4 20% tKC VSS-2.0V 50% VSS VIH Undershoot Measurement and Timing Overshoot Measurement and Timing 20% tKC VDD+-2.0V 50% VDD VIL |
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