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LM1893 Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LM1893 Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 24 page ![]() Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply voltage 30 V Voltage on pin 12 55 V Voltage on pin 10 (Note 1) 41 V Voltage on pins 5 and 17 40 V 56 V DC zener current 100 mA Junction temperature transmit mode 150 C receive mode 125 C Electro-Static Discharge (120 pF 1500X) 1KV Maximum continuous dissipation TAe25 C plastic DIP N (Note 2) transmit mode 166 W receive mode 133 W Operating ambient temp range b 40 to 85 C Storage temperature range b 65 to 150 C Lead temp soldering 7 seconds 260 C Note Absolute maximum ratings indicate limits beyond which damage to the device may occur Electrical specifica- tions are not ensured when operating the device above guaranteed limits but below absolute maximum limits but there will be no device degradation General Electrical Characteristics (Note 3) The test conditions are Va e18V and FOe125 kHz unless otherwise noted Test Design Limit Parameter Conditions Typical Limit Limit Units (Note 4) (Note 5) 1 56 V Zener voltage VZ Pin 11 IZe2 mA 56 52 V min 59 V max 2 56 V Zener resistance RZ Pin 11 RZe(VZ 10 mAbVZ 1 mA)(10 mAb1 mA) 5 X 3 Carrier IO peak survivable Pin 10 discharge 1 mF cap charged to VOT 80 60 V max transient voltage VOT thru k1X 4 Carrier IO clamp voltage VOC Pin 10 IOCe10 mA RX mode 44 41 V min 2N2222 diode pin 8 to 9 50 V max 5 Carrier IO clamp resistance R10 Pin 10 IOCe10 mA 20 X 6 TXRX low input voltage VIL Pin 5 18 08 V max 7 TXRX high input voltage VIH Pin 5 (Note 9) 22 28 V min 8 TXRX low input current IIL Pin 5 at 08 V b 2 b 20 m A min 1 m A max 9 TXRX high input current IIH Pin5at40V b 1 0 m A min 10 b 4 10 m A max 10 RXbTX switch-over time TRT Time to develop 63% of full current drive thru pin 10 10 m s 11 TXbRX switch-over time TTR 1 bit time TBe1(2FDATA) Time TTR is user 2 bit controlled with CM see Apps Info 12 ICO initial accuracy of FO TX mode RO e 665 kX CO e 560 pF 125 113 kHz min F0 e (F1 a F2)2 137 kHz max 13 ICO temperature coefficient of FO TX or RX mode (FOMAXbFOMIN)(TJMAXbTJMIN) b 100 PPM C 14 Temperature drift of FO TX or RX mode b40sTJsTJMAX g 20 g 50 % max Transmitter Electrical Characteristics (Note 3) The test conditions are Vae18 V and F O e 125 kHz unless otherwise noted The transmit center frequency is FO FSK low is F1 and FSK high is F2 Test Design Limit Parameter Conditions Typical Limit Limit Units (Note 4) (Note 5) 15 Supply voltage V a range Meets test 17 spec at TJe25 C and 13 14 15 V min l(F1 14V bF1 18V )F1 18V lk001 40 24 23 V max l(F1 24V bF1 18V )F1 18V lk001 16 Total supply current IQT Pin 15 Pin 12 high IQT is IQ through 52 79 mA max pin 15 and the average current IODC of the Carrier IO through pin 10 17 Carrier IO output current IO 100X load on pin 10 70 45 mApp min 18 Carrier IO lower swing limit VALC Pin 10 Set internally be ALC 47 40 V min 2N2222 diode pin 8 to 9 57 V max 19 THD of IO (Note 6) Q of 10 tank driving 10X line 06 50 % max 100X load no tank 55 9 % max 20 FSK deviation F2bF1 (F2bF1)( F2aF1 2) 44 37 % min 52 % max 21 Data In low input voltage VIL Pin 17 17 08 V max 22 Data In high input voltage VIH Pin 17 (Note 9) 21 28 V min 23 Data In low input current IIL Pin 17 at 08 V b 1 b 10 m A min 1 m A max 24 Data In high input current IIH Pin 17 at 40 V b 1 0 m A min 10 b 4 10 m A max 2 |
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