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HV7321 Datasheet(PDF) 7 Page - Microchip Technology

Part # HV7321
Description  4-Ch. 5-Level 짹80V High-Voltage Ultrasound Pulser with T/R Switches
PDF  30 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

HV7321 Datasheet(HTML) 7 Page - Microchip Technology

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 2016 Microchip Technology Inc.
DS20005639A-page 7
HV7321
TX Output P-Channel MOSFET on VPP1
On-Resistance at PWS = 1
RON_P1
—16
21
Ω
ISD = 100 mA
On-Resistance at PWS = 0
—
33
43
Peak Output Current at PWS = 1 (1)
IOUT_P1
0.8
1.0
—
A
VPP0,1 = +25V, RL = 1.0Ω to GND
1.5
1.75
—
VPP0,1= +80V, RL = 1.0Ω to GND
Peak Output Current at PWS = 0 (1)
0.4
0.5
—
VPP0,1 = +25V, RL = 1.0Ω to GND
0.8
0.95
—
VPP0,1 = +80V, RL = 1.0Ω to GND
TX Output N-Channel MOSFET on VNN0
On-Resistance
RON_N0
—8
10
Ω
ISD = 100 mA
Peak Output Current (1)
IOUT_N0
-1.4
-1.7
—
A
VNN0 = -25V, RL = 1.0Ω to GND
-2.0
-2.3
—
A
VNN0 = -80V, RL = 1.0Ω to GND
TX Output N-Channel MOSFET on VNN1
On-Resistance at PWS = 1
RON_N1
—11
13
Ω
ISD = 100 mA
On-Resistance at PWS = 0
—
36
45
Peak Output Current at PWS = 1 (1)
IOUT_N1
—
-1.2
-1.0
A
VNN0,1 = -25V, RL = 1.0Ω to GND
—
-1.6
-1.3
VNN0,1 = -80V, RL = 1.0Ω to GND
Peak Output Current at PWS = 0 (1)
—
-0.4
-0.3
VNN0,1 = -25V, RL = 1.0Ω to GND
—
-0.55
-0.4
VNN0,1= -80V, RL = 1.0Ω to GND
TX Damping P-Channel MOSFET on GND
On-Resistance
RON_PDMP
—7.0
16
Ω
ISD = 100 mA
Peak Output Current (1)
IOUT_PDMP
2.3
2.7
—
A
RL = 1.0Ω from -25V to TX
2.3
2.8
—
A
RL = 1.0Ω from -80V to TX
TX Damping N-Channel MOSFET on GND
On-Resistance
RON_NDMP
—7.0
16
Ω
ISD = 100 mA
Peak Output Current (1)
IOUT_NDMP
—
-2.0
-1.8
A
RL = 1.0Ω from +25V to TX
—
-2.3
-2.0
A
RL = 1.0Ω from +80V to TX
RTZSW Auto Bleed High-Voltage Analog Switch
RTZSW On-Resistance (1)
RRTZSW
—
238
270
Ω
ISD = ±1.0 mA
RTZSW Off Withstand Voltage (1)
VRTZSW
-80
—
+80
V
ISW = ±100 μA
TX OUTPUT Isolation Diodes and Bleed Resistor
Diode Forward Voltage
VF
—0.96
1.9
V
IFM = 300 mA, Note 1
Forward Continuous Current
IFM
—
300
—
mA
Note 2
Peak Forward Pulse Current
IFSM
—
3.0
—
A
PW = 50 ns, Note 2
Total Capacitance of 2-diode
CT
—
3.5
—
pF
at 1 MHz, 1 dBm, 0V DC, Note 2
TX/RX Bleed Resistor to GND
Rb
11
15
20
kΩ
Note 1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical specifications:
VLL = +2.5V, VDD = +5.0V, VPP0,1 = +80V, VNN0,1,2 = -80V, VGP = +10V, VGN = -10V,
VSUB = 0V, PWS = OEN = REN = 1, TA = 25°C, unless otherwise specified. Parameters in Bold apply over the
operating temperature range of T
A = TJ = 0 to +85°C.
Parameter
Sym.
Min.
Typ.
Max.
Unit
Conditions
Note 1:
Characterized only; not 100% tested in production.
2:
Design guidance only.



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