TLE7186F datasheet(14/39 Pages) INFINEON

14 / 39 page

Data Sheet

Rev. 1.2, 2016-01-28

TLE7186F

MOSFET Driver

MOSFET driver output

5.5.6

Output source resistance

Sou

2–

13.5

load=20mA

5.5.7

Output sink resistance

Sink

2–

load=20mA

5.5.8

High level output voltage Gxx vs.

Sxx

Gxx1

–11

13,5V

<=V

VS<=45V

3),

IOV<=VOVIOV,

VDH<=VOVVDH

load=37,5mA

5.5.9

High level output voltage GHx vs.

SHx2)

Gxx2

––V

Vs=8V,

load=20nF,

dc=95%;

PWM=20kHz

5.5.10

High level output voltage GHx vs.

SHx2)4)

Gxx3

diode

––V

Vs=8V,

load=20nF,

dc=95%;

PWM=20kHz;

passive

freewheeling

5.5.11

High level output voltage GLx vs.

GND

Gxx4

6.7

––V

VS=8V,

load=20nF,

dc=95%;

PWM=20kHz;

5.5.12

Rise time

j = -40°C

j = 150°C

rise

100

150

–

230

350

Load=11nF;

Load=1Ω

VS=7V

20-80%

5.5.13

Fall time

j = -40°C

j = 150°C

fall

150

–

210

290

5.5.14

High level output voltage (in

passive clamping)

GUV

–

1.2

sleep mode or

VS_UVLO2) 5)

5.5.15

Pull-down resistor at BHx to GND

BHUV

––

5.5.16

Pull-down resistor at VREG to GND

VRUV

––

5.5.17

Bias current into BHx

––

150

µA

BHx-VSHx=5...13V;

no switching

5.5.18

Current between BHx and SHx

BSH

µA

BHx-VSHx=5...13V;

SHX = GND

5.5.19

Resistor between SHx and GND

SHGN

112

5.5.20

Bias current out of SL

–

0V<=VSH<=VS+1

V; no switching;

CBS>5V

Electrical Characteristics MOSFET Drivers

S = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)1)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

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