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HAL114 Datasheet(PDF) 4 Page - Micronas |
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HAL114 Datasheet(HTML) 4 Page - Micronas |
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4 / 9 page ![]() HAL114 MICRONAS INTERMETALL 4 Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 –15 281) V –VP Test Voltage for Supply 1 –242) – V –IDD Reverse Supply Current 1 – 501) mA IDDZ Supply Current through Protection Device 1 –2003) 2003) mA VO Output Voltage 3 –0.3 281) V IO Continuous Output On Current 3 – 30 mA IOmax Peak Output On Current 3 – 2503) mA IOZ Output Current through Protection Device 3 –2003) 2003) mA TS Storage Temperature Range –65 150 °C TJ Junction Temperature Range –40 –40 150 1704) °C 1) as long as TJmax is not exceeded 2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1 3) t< 2 ms 4) t<1000h Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the “Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 4.5 – 24 V IO Continuous Output On Current 3 0 – 20 mA RV Series Resistor 1 – – 270 Ω Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Test Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions VOL Output Voltage over Temperature Range 3 – 120 400 mV IOL = 12.5 mA VOL Output Voltage over Temperature Range 3 – 190 500 mV IOL = 20 mA IOH Output Leakage Current 3 – – 1 µA B < Boff, VOH = 24 V, TJ = 25 °C |
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