HAL114

MICRONAS INTERMETALL

3

Functional Description

The HAL114 is a CMOS integrated circuit with a switch-

ing output in response to magnetic fields. It processes

the “Hall Voltage” internally: The Hall Voltage is propor-

tional to the magnetic flux component Bz orthogonal to

an integrated Hall Plate, in case an electric current is im-

posed to the plate. The HAL114 compares the Hall Volt-

age with a predefined threshold and generates the out-

put signal dependent of the direction of the magnetic

field. A special circuit compensates for the temperature

dependent effects of the IC, as well as the external mag-

net. A built-in hysteresis eliminates possible oscillations

of the output signal adjacent to its switching point so that

“output bouncing” is avoided. The output is short-circuit

protected by limiting high currents and by sensing ex-

cess temperature. Shunt protection devices clamp

with external series resistors. Reverse current is limited

No external reverse protection diode is needed at the

Temperature

Dependent

Bias

Hysteresis

Control

Comparator

Output

1

OUT

3

Hall Plate

GND

2

Fig. 2: HAL 114 block diagram

HAL 114

Short Circuit &

Overvoltage

Protection

Reverse

Voltage &

Overvoltage

Protection

Dimensions of Sensitive Area

0.4 mm x 0.2 mm

Positions of Sensitive Area

SOT-89A

TO-92UA

x = 0

± 0.2

x = 0

± 0.2

y = 0.98

± 0.2

y = 1.0

± 0.2

x is referenced to the center of the package

Outline Dimensions

0.4

0.4

1.7

0.4

1.5

3.0

branded side

SPGS7001-6-A/2E

sensitive area

top view

y

12

3

2

Fig. 3:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g

Dimensions in mm

0.125

0.7

sensitive area

0.55

branded side

0.36

0.8

0.3

45

°

y

14.0

min.

3.1

1.27

1.27

2.54

12

3

0.42

Fig. 4:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g

Dimensions in mm

2.03

0.48

SPGS7002-6-A/1E