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NE681 Datasheet(PDF) 1 Page - NEC |
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NE681 Datasheet(HTML) 1 Page - NEC |
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1 / 20 page  PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: PLEASE NOTE: The following part numbers The following part numbers The following part numbers The following part numbers The following part numbers from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not from this datasheet are not recommended for new design. recommended for new design. recommended for new design. recommended for new design. recommended for new design. Please call sales office for Please call sales office for Please call sales office for Please call sales office for Please call sales office for details: details: details: details: details: NE68135 NE68135 NE68135 NE68135 NE68135 0.5 1.0 2.0 3.0 1.0 2.0 3.0 0 10 20 MSG GA NF VCE = 3 V, IC = 5 mA MAG NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 (CHIP) 35 (MICRO-X) Frequency, f (GHz) 18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) 33 (SOT 23 STYLE) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- tions. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount pack- age styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY 30 (SOT 323 STYLE) |
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Similar Description - NE681 |
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