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NE681 Datasheet(PDF) 2 Page - NEC

Part # NE681
Description  NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
PDF  20 Pages
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

NE681 Datasheet(HTML) 2 Page - NEC

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NE681 SERIES
PART NUMBER
NE68133
NE68135
NE68139/39R
EIAJ1 REGISTERED NUMBER
2SC3583
2SC3604
2SC4094
PACKAGE OUTLINE
33
35
39
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP MAX
fT
Gain Bandwidth Product at VCE = 8 V, IC = 20 mA
GHz
9.0
9.0
9.0
VCE = 3 V, IC = 7 mA
GHz
NF
Noise Figure at VCE = 8 V, IC = 7 mA, f = 1 GHz
dB
1.2
2
1.2
2
f = 2 GHz
dB
1.6
2.3
GNF
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
13
13.5
f = 2 GHz
dB
12
|S21E|2
Insertion Power Gain at VCE = 8 V, IC = 20 mA,
f = 1 GHz
dB
11
12.5
15
f = 2 GHz
dB
7
9
11
8.5
hFE
Forward Current Gain2 at VCE= 8 V, IC = 20 mA
VCE = 3 V, IC = 7 mA
50
100
250
50
100
250
50
100
200
ICBO
Collector Cutoff Current at VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0 mA
µA
1.0
1.0
1.0
CRE3
Feedback Capacitance at
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.35
0.9
0.2
0.7
0.25
0.8
RTH (J-A)
Thermal Resistance (Junction to Ambient)
°C/W
625
590
625
PT
Total Power Dissipation
mW
200
295
200
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE68100
NE68118
NE68119
NE68130
EIAJ1 REGISTERED NUMBER
2SC5012
2SC5007
2SC4227
PACKAGE OUTLINE
00 (CHIP)
18
19
30
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS MIN TYP MAX
MIN
TYP MAX
MIN
TYP MAX
MIN
TYP MAX
fT
Gain Bandwidth Product at
VCE = 8 V, IC = 20 mA
GHz
9.0
9.0
VCE = 3 V, IC = 7 mA
GHz
7.0
7.0
NF
Noise Figure at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
1.2
2.5
1.4
1.5
f = 2 GHz
dB
1.6
2.3
1.8
1.6
GNF
Associated Gain at VCE = 8 V, IC = 7 mA,
f = 1 GHz
dB
14
14
13.5
f = 2 GHz
dB
12
10
9
|S21E|2
Insertion Power Gain at
VCE = 8 V, IC = 20 mA, f = 1 GHz
dB
17
13
15
14
13
f = 2 GHz
dB
9
11
9
8
7.5
hFE
Forward Current Gain2 at
VCE = 8 V, IC = 20 mA
50
100
250
50
100
250
VCE = 3 V, IC = 7 mA
80
160
40
240
ICBO
Collector Cutoff Current at
VCB = 10 V, IE = 0 mA
µA
1.0
1.0
1.0
1.0
IEBO
Emitter Cutoff Current at
VEB = 1 V, IC = 0 mA
µA
1.0
1.0
1.0
1.0
CRE3
Feedback Capacitance at
VCB = 3 V, IE = 0 mA, f = 1 MHz
pF
0.45
0.9
0.45
0.9
VCB = 10 V, IE = 0 mA, f = 1 MHz
pF
0.2
0.7
0.25
0.8
RTH (J-A)
Thermal Resistance (Junction to Ambient) °C/W
80
833
1000
833
PT
Total Power Dissipation
mW
600
150
100
150
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed (PW ≤ 350 ms, duty cycle ≤ 2 %).
3. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
ELECTRICAL CHARACTERISTICS (TA = 25°C)



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