1997 Oct 14

2

Philips Semiconductors

Product specification

UHF power transistor

BLT71/8

FEATURES

• High efficiency

• Very high gain

• Internal pre-matched input

• Low supply voltage.

APPLICATIONS

• Hand-held radio equipment in common emitter class-AB

operation for the 900 MHz communication band.

DESCRIPTION

NPN silicon planar epitaxial power transistor encapsulated

in a SOT96-1 (SO8) plastic SMD package.

PINNING - SOT96-1

PIN

SYMBOL

DESCRIPTION

1, 8

b

base

2, 4, 5, 7

e

emitter

3, 6

c

collector

Fig.1 Simplified outline.

handbook, halfpage

4

5

1

8

Top view

MBK187

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

900

4.8

1.2

≥11

≥55

typ. 13

typ. 63

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

16

V

collector-emitter voltage

open base

−

8V

emitter-base voltage

open collector

−

2.5

V

collector current (DC)

−

500

mA

total power dissipation

−

2.9

W

storage temperature

−65

+150

°C

operating junction temperature

−

175

°C