BLT71 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1997 Oct 14

Philips Semiconductors

Product speciﬁcation

UHF power transistor

BLT71/8

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Rth j-s

thermal resistance from junction to

soldering point

Pdis = 2.9 W; Ts =60 °C; note 1

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

open emitter; IC = 0.5 mA

−

V(BR)CEO

collector-emitter breakdown voltage

open base; IC =10mA

−

V(BR)EBO

emitter-base breakdown voltage

open collector; IE = 0.1 mA

2.5

−

ICES

collector leakage current

VCE =8V; VBE =0

−

0.1

hFE

DC current gain

VCE =5V; IC = 100 mA

−

collector capacitance

VCB = 4.8 V; IE =ie = 0; f = 1 MHz

−

7pF

Cre

feedback capacitance

VCE = 4.8 V; IC = 0; f = 1 MHz

−

5pF

Fig.2

DC SOAR.

Ts = 115 °C.

handbook, halfpage

10−1

MBK263

10−1

110

(A)

VCE (V)

102

(1)

Fig.3

DC current gain as a function of collector

current; typical values.

VCE = 4.8 V.

Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0.001.

handbook, halfpage

100

150

200

400

600

800

hFE

IC (mA)

MLD131

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