Data Sheet

AMP01

Rev. E | Page 9 of 29

WAFER TEST LIMITS (AMP01NBC)

Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult

the factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.

Table 5.

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

OFFSET VOLTAGE

Input Offset Voltage

60

μV

Input Offset Voltage Drift

0.15

μV/°C

Output Offset Voltage

4

mV

Output Offset Voltage Drift

20

μV/°C

Offset Referred to Input vs. Positive Supply

PSR

V+ = 5 V to 15 V

G = 1000

120

dB

G = 100

110

dB

G = 10

95

dB

G = 1

75

dB

Offset Referred to Input vs. Negative Supply

PSR

V– = –5 V to –15 V

G = 1000

105

dB

G = 100

90

dB

G = 10

70

dB

G = 1

50

dB

INPUT CURRENT

Input Bias Current

4

nA

Input Bias Current Drift

40

pA/°C

Input Offset Current

1

nA

Input Offset Current Drift

3

pA/°C

INPUT

Input Voltage Range

IVR

Guaranteed by CMR tests

±10

V min

Common-Mode Rejection

CMR

G = 1000

125

dB

G = 100

120

dB

G = 10

100

dB

G = 1

85

dB

GAIN

Gain Equation Accuracy

0.6

%

OUTPUT RATING

Output Voltage Swing

−13

+13

V

−13

+13

V

−2.5

+2.5

V

Output Current Limit

Output to ground short

−60

+60

mA

Output to ground short

−120

+120

mA

Quiescent Current

4.8

mA

4.8

mA

NOISE

Nonlinearity

G = 1000

0.0007

%

Voltage Noise Density

5

nV/√Hz

Current Noise Density

0.15

pA/√Hz

Voltage Noise

G = 1000, 0.1 Hz to 10 Hz

0.12

μV p-p

Current Noise

BW

G = 1000, 0.1 Hz to 10 Hz

2

pA p-p

DYNAMIC RESPONSE

Small-Signal Bandwidth (−3 dB)

SR

G = 1000

26

kHz

Slew Rate

G = 10

4.5

V/μs

Settling Time

To 0.01%, 20 V step, G = 1000

50

μs