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ADuM7223CCCZ Datasheet(PDF) 7 Page - Analog Devices

Part # ADuM7223CCCZ
Description  High-side or low-side relative to input
PDF  17 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADuM7223CCCZ Datasheet(HTML) 7 Page - Analog Devices

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ADuM7223
Data Sheet
PACKAGE CHARACTERISTICS
Table 3.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions/Comments
Resistance (Input-to-Output)
RI-O
1012
Ω
Capacitance (Input-to-Output)
CI-O
2.0
pF
f = 1 MHz
Input Capacitance
CI
4.0
pF
IC Junction-to-Ambient Thermal Resistance
θJA
96.3
°C/W
IC Junction-to-Case Thermal Resistance
θJC
43.2
°C/W
INSULATION AND SAFETY-RELATED SPECIFICATIONS
Table 4.
Parameter
Symbol
Value
Unit
Test Conditions/Comments
Functional Dielectric Insulation Voltage1
2500
V rms
1 minute duration
Minimum External Air Gap (Clearance)
L(I01)
3.5 min
mm
Measured from input terminals to output terminals,
shortest distance through air
Minimum External Tracking (Creepage)
L(I02)
3.5 min
mm
Measured from input terminals to output terminals,
shortest distance path along body
Minimum Internal Gap (Internal Clearance)
0.017 min
mm
Insulation distance through insulation
Tracking Resistance (Comparative Tracking Index)
CTI
>400
V
DIN IEC 112/VDE 0303 Part 1
Isolation Group
II
Material Group (DIN VDE 0110, 1/89, Table 1)
1
Insulation voltage guaranteed by design, not tested in production. Insulation is similar in structure to devices that are tested to 5 kV rms in production.
Figure 2. Thermal Derating Curve
RECOMMENDED OPERATING CONDITIONS
Table 5.
Parameter
Symbol
Min
Max
Unit
Operating Junction
Temperature
TJ
−40
+125
°C
Supply Voltages1
VDD1
3.0
5.5
V
VDDA,VDDB
4.5
18
V
Maximum Input Signal Rise
and Fall Times
TVIA, TVIB
1
ms
Common-Mode Transient
Static2
−50
+50
kV/µs
Common-Mode Transient
Immunity Dynamic3
−25
+25
kV/µs
1
All voltages are relative to their respective ground. See the Applications
Information section for information on immunity to external magnetic fields.
2
Static common-mode transient immunity is defined as the largest dv/dt
between GND1 and GNDA/GNDB with inputs held either high or low such that
the output voltage remains either above 0.8 × VDD2 for VIA/VIB = high, or 0.8 V
for VIA/VIB = low. Operation with transients above recommended levels can
cause momentary data upsets.
3
Dynamic common-mode transient immunity is defined as the largest dv/dt
between GND1 and GNDA/GNDB with switching edge coincident with the
transient test pulse. Operation with transients above recommended levels
can cause momentary data upsets.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
50
100
150
200
AMBIENT TEMPERATURE (ºC)
Rev. A | Page 6 of 16



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