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ADuM7223CCCZ Datasheet(PDF) 7 Page - Analog Devices |
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ADuM7223CCCZ Datasheet(HTML) 7 Page - Analog Devices |
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7 / 17 page ![]() ADuM7223 Data Sheet PACKAGE CHARACTERISTICS Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments Resistance (Input-to-Output) RI-O 1012 Ω Capacitance (Input-to-Output) CI-O 2.0 pF f = 1 MHz Input Capacitance CI 4.0 pF IC Junction-to-Ambient Thermal Resistance θJA 96.3 °C/W IC Junction-to-Case Thermal Resistance θJC 43.2 °C/W INSULATION AND SAFETY-RELATED SPECIFICATIONS Table 4. Parameter Symbol Value Unit Test Conditions/Comments Functional Dielectric Insulation Voltage1 2500 V rms 1 minute duration Minimum External Air Gap (Clearance) L(I01) 3.5 min mm Measured from input terminals to output terminals, shortest distance through air Minimum External Tracking (Creepage) L(I02) 3.5 min mm Measured from input terminals to output terminals, shortest distance path along body Minimum Internal Gap (Internal Clearance) 0.017 min mm Insulation distance through insulation Tracking Resistance (Comparative Tracking Index) CTI >400 V DIN IEC 112/VDE 0303 Part 1 Isolation Group II Material Group (DIN VDE 0110, 1/89, Table 1) 1 Insulation voltage guaranteed by design, not tested in production. Insulation is similar in structure to devices that are tested to 5 kV rms in production. Figure 2. Thermal Derating Curve RECOMMENDED OPERATING CONDITIONS Table 5. Parameter Symbol Min Max Unit Operating Junction Temperature TJ −40 +125 °C Supply Voltages1 VDD1 3.0 5.5 V VDDA,VDDB 4.5 18 V Maximum Input Signal Rise and Fall Times TVIA, TVIB 1 ms Common-Mode Transient Static2 −50 +50 kV/µs Common-Mode Transient Immunity Dynamic3 −25 +25 kV/µs 1 All voltages are relative to their respective ground. See the Applications Information section for information on immunity to external magnetic fields. 2 Static common-mode transient immunity is defined as the largest dv/dt between GND1 and GNDA/GNDB with inputs held either high or low such that the output voltage remains either above 0.8 × VDD2 for VIA/VIB = high, or 0.8 V for VIA/VIB = low. Operation with transients above recommended levels can cause momentary data upsets. 3 Dynamic common-mode transient immunity is defined as the largest dv/dt between GND1 and GNDA/GNDB with switching edge coincident with the transient test pulse. Operation with transients above recommended levels can cause momentary data upsets. 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 50 100 150 200 AMBIENT TEMPERATURE (ºC) Rev. A | Page 6 of 16 |
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