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LMX2353TM Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMX2353TM Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 16 page ![]() Absolute Maximum Ratings (Notes 1, 2) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage V CC −0.3V to 6.5V Vp −0.3V to 6.5V Voltage on any pin with GND = 0V (V I) −0.3V to V CC +0.3V Storage Temperature Range (T S) −65˚C to +150˚C Lead Temperature (solder, 4 sec.) (T L) +260˚C ESD - Human Body Model (Note 2) 2 kV Recommended Operating Conditions Power Supply Voltage V CC 2.7V to 5.5V Vp V CC to 5.5V Operating Temperature (T A) −40˚C to +85˚C Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the de- vice is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test condi- tions listed. Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should only be done at ESD free workstations. Electrical Characteristics (V CC = Vp = 3.0V; −40˚C < TA < 85˚C except as specified). Symbol Parameter Conditions Value Unit Min Typ Max GENERAL I CC Power Supply Current 4.5 mA I CC-PWDN Power Down Current CE = LOW 5 µA f IN RF Operating Frequency (Note 3) 0.5 2.5 GHz f OSC Oscillator Frequency (Note 3) 2 50 MHz f φ Phase Detector Frequency 10 MHz Pf IN RF Input Sensitivity V CC = 3.0V −15 0 dBm V CC = 5.0V −10 0 dBm V OSC Oscillator Sensitivity OSC IN 0.5 V CC V PP CHARGE PUMP ICP o-source Charge Pump Output Current VCP o = Vp/2, CP_WORD = 0000 −100 µA ICP o-sink VCP o = Vp/2, CP_WORD = 0000 100 µA ICP o-source VCP o = Vp/2, CP_WORD = 1111 −1.6 mA ICP o-sink VCP o = Vp/2, CP_WORD = 1111 1.6 mA ICP o-TRI Charge Pump TRI-STATE Current 0.5 ≤ VCP o ≤ Vp − 0.5, −40˚C < T A < 85˚C 500 pA ICP o-sink vs ICP o-source CP Sink vs Source Mismatch VCP o = Vp/2, TA = 25˚C 3 % ICP o vs VCP o CP Current vs Voltage 0.5 ≤ VCP o ≤ Vp − 0.5, TA = 25˚C 8 % ICP o vs T CP Current vs Temperature VCP o = Vp/2, −40˚C < TA < 85˚C 8 % VOLTAGE DOUBLER V D-ON Voltage Doubler Turn on Time OSC IN = 10 MHz, Cext = 0.1 µF V P Settled to within ± 10% TBD µs V CPO Charge Pump Output Voltage 2.7V ≤ V CC ≤ 3.3V, Doubler Enabled 2xV CC − 1.0 V V P DOUBLER Doubler Voltage at V P Pin 2.7V ≤ V CC ≤ 3.3V, Doubler Enabled 2xV CC − 0.5 V DIGITAL INTERFACE (DATA, CLK, LE, EN, F oLD) V IH High-Level Input Voltage (Note 4) 0.8 x V CC V V IL Low-Level Input Voltage (Note 4) 0.2 x V CC V www.national.com 3 |
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