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SIP21110 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SIP21110 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 12 page ![]() Document Number: 69921 S09-1046-Rev. C, 08-Jun-09 www.vishay.com 3 Vishay Siliconix SiP21110 Notes: a. Room = 25 °C, Full = - 40 °C to 85 °C. Derate 5.5 mW/°C for SiP21110 above TA = 70 °C. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Dropout voltage is defined as the input-to-output differential voltage at which the output voltage drops 2 % below its nominal value with constant load. For outputs = 2.2 V, dropout voltage is not applicable due to 2.2 V minimum input voltage requirement. e. Ground current is specified for normal operation as well as “drop-out” operation. f. The LDO output range is confined to 2.5 V minimum and 5.0 V maximum as a result of min VIN is 2.2 V. For linear regulator outputs where the output voltages is less than 2.5 V the dropout voltage does not apply. SPECIFICATIONS Parameter Symbol Test Conditions Unless Specified VIN = VOUT(nom) + 1 V = VEN VOUT = 2.8 V, CIN = 1 µF, COUT = 1 µF - 40 °C < TA < 85 °C for Full Temp. Temp.a Unit Min.b Typ.c Max.b Input Voltage Range VIN Full 2.2 6 V Feedback Voltage VAdj Room 1.188 1.2 1.212 Full 1.170 1.23 Output Voltage Rangef VOUTR Full 1.3 5 Output Voltage Accuracy VOUT VOUT = 2.8 V, IL = 1 mA Room - 1 1 % Full - 2.5 2.5 Line Regulation LNR VIN range 3.8 V to 6 V, IL = 1 mA Room 0.025 0.2 %/V Load Regulation LDR VIN 3.8 V, IL step 1 mA to 250 mA Room 0.001 %/mA Dropout Voltaged VDO IL = 250 mA Room 180 225 300 mV Full 390 Ground Currente IGND VIN 3.8 V, IL = 1 mA Room 35 75 µA Full 85 VIN 3.8 V, IL = 250 mA Room 39 75 Full 85 Shutdown Current IVINLKG Full 0.035 1 Output Current Limit IO-Limit VO = 0 V Room 275 500 800 mA EN Input Current IEN EN = VIN = 6 V Full 0.004 1 µA EN Pin Input Voltage VENH minimum VEN output on Full 1.2 V VENL maximum VEN output off Full 0.4 Auto Discharge Resistance RDIS VOUT = 2 V Room 100 Ω Thermal Shutdown Junction Temperature TJSD minimum VEN output on Full 160 °C Thermal Hysteresis THYST maximum VEN output off Full 20 Output Noise Voltage (RMS) eN BW = 10 Hz to 100 kHz, 1 mA < IOUT < 250 mA Room 350 µV Ripple Rejection PSRR f = 1 kHz, IOUT = 10 mA 72 dB f = 10 kHz, IOUT = 10 mA 53 f = 100 kHz, IOUT = 10 mA 38 Output Voltage Turn-On Time ton EN to VOUT delay; IOUT = 1 mA Room 70 µs |
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