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LET20045C Datasheet(PDF) 1 Page - STMicroelectronics |
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LET20045C Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() July 2011 Doc ID 022024 Rev 1 1/9 9 LET20045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT (@ 28 V)= 54 W with 13.3 dB gain @ 2000 MHz ■ POUT (@ 36 V)= 65 W with 12.5 dB gain @ 2000 MHz ■ BeO free package ■ In compliance with the 2002/95/EC European directive Description The LET20045C is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20045C is designed for high gain and broadband performance operating in common source mode at 36 V. It is ideal for base station applications requiring high linearity. Figure 1. Pin out M243 epoxy sealed 1 3 2 1. Drain 2. Gate 3. Source Table 1. Device summary Order code Package Branding LET20045C M243 LET20045C www.st.com |
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