This is information on a product in full production.

February 2014

DocID023574 Rev 5

1/16

STD26P3LLH6

P-channel 30 V, 0.024

Ω typ., 12 A, STripFET™ VI DeepGATE™

Power MOSFET in a DPAK package

Figure 1. Internal schematic diagram

Features

• R

DS(on)

* Q

g

industry benchmark

• Extremely low on-resistance R

DS(on)

• High avalanche ruggedness

• Low gate input resistance

Applications

• Switching applications

• LCC converters, resonant converters

Description

This device is a P-channel Power MOSFET

developed using the 6

th

generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R

DS(on)

in all packages

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

1

3

TAB

2

DPAK

D(2 or TAB)

G(1)

S(3)

AM11258v1

Order code

max

STD26P3LLH6

30 V

0.030

1.

@ V

GS

= 10 V

12 A

40 W

Table 1. Device summary

Order code

Marking

Package

Packaging

STD26P3LLH6

26P3LLH6

DPAK

Tape and reel

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