DocID023574 Rev 5

3/16

STD26P3LLH6

Electrical ratings

16

1

Electrical ratings

Note:

For the P-channel Power MOSFETs the actual polarity of the voltages and the current must

be reversed.

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

DS

Drain-source voltage

30

V

V

GS

Gate-source voltage

±20

V

I

D

(1)

1.

Limited by wire bonding.

Drain current (continuous) at T

C

= 25 °C

12

A

I

D

(1)

Drain current (continuous) at T

C

= 100 °C

8.5

A

I

DM

(1)(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

48

A

P

TOT

(1)

Total dissipation at T

C

= 25 °C

40

W

T

stg

Storage temperature

-55 to 175

°C

T

j

Max. operating junction temperature

175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thj-case

Thermal resistance junction-case max

3.75

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

E

AS

Single pulse avalanche energy

(starting T

J

=25 °C, I

D

=6 A, I

AS

=12 A, V

DD

=25 V,

V

gs

=10 V)

350

mJ