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STGWA80H65DFB Datasheet(PDF) 9 Page - STMicroelectronics |
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STGWA80H65DFB Datasheet(HTML) 9 Page - STMicroelectronics |
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9 / 17 page ![]() STGWA80H65DFB Electrical characteristics DocID030057 Rev 1 9/17 Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. collector emitter voltage Figure 18: Switching time vs. collector temperature Figure 19: Switching time vs. gate resistance Figure 20: Reverse recovery current vs. diode current slope Figure 21: Reverse recovery time vs. diode current slope t 100 10 1 IC(A) (ns) 20 40 60 80 TJ= 175°C, VGE = 15V VCC= 400V, Rg = 10Ω 100 tf tdon 120 tr tdoff 140 GIPD160920131533FSR t 100 10 Rg (Ω) (ns) 4 8 TJ= 175°C, VGE = 15V VCC= 400V, IC= 80A 12 tr tdon tf tdoff 16 20 GIPD160920131539FSR = 80 A |
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