STGWA80H65DFB datasheet(3/17 Pages) STMICROELECTRONICS

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STGWA80H65DFB

Electrical ratings

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Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0 V)

650

Continuous collector current at TC = 25 °C

120(1)

Continuous collector current at TC = 100 °C

ICP(2)(3)

Pulsed collector current

300

VGE

Gate-emitter voltage

± 20

Continuous forward current at TC = 25 °C

120(1)

Continuous forward current at TC = 100 °C

IFP(2)(3)

Pulsed forward current

300

PTOT

Total dissipation at TC = 25 °C

469

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

- 55 to 175

Notes:

(1)Current level is limited by bond wires

(2)Pulse width limited by maximum junction temperature. (tp < 1ms , TJ < 175 °C)

(3)Defined by design, not tested.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.32

°C/W

RthJC

Thermal resistance junction-case diode

0.66

RthJA

Thermal resistance junction-ambient

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