HAL320 datasheet(6/13 Pages) ETC

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HAL320

Micronas

Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol

Parameter

Pin No.

Min.

Typ.

Max.

Unit

Conditions

IDD

Supply Current

2.8

4.7

6.8

TJ = 25 °C

IDD

Supply Current over

Temperature Range

1.8

4.7

7.5

VDDZ

Overvoltage Protection

at Supply

–

28.5

32.5

IDD = 25 mA, TJ = 25 °C,

t = 20 ms

VOZ

Overvoltage Protection at Output

–

32.5

IOH = 25 mA, TJ = 25 °C,

t = 20 ms

VOL

Output Voltage

–

170

250

VDD = 12 V, IO = 20 mA,

TJ = 25 °C

VOL

Output Voltage over

Temperature Range

–

170

400

IO = 20 mA

VOL

Output Voltage over

Temperature Range

–

210

500

IO = 25 mA

IOH

Output Leakage Current

–

µA

VOH = 4.5 V... 24 V,

DB < DBOFF, TJ = 25 °C

IOH

Output Leakage Current over

Temperature Range

–

µA

VOH = 4.5 V... 24 V,

DB < DBOFF, TJ ≤ 150 °C

fosc

Internal Oscillator

Chopper Frequency

–

kHz

TJ = 25 °C

fosc

Internal Oscillator Chopper Fre-

quency over Temperature Range

–

kHz

ten(O)

Enable Time of Output

after Setting of VDD

–

µs

VDD = 12 V,

DB > DBON + 2mT or

DB < DBOFF – 2mT

Output Rise Time

–

400

VDD = 12 V, RL = 820 Ω,

CL = 20 pF

Output Fall Time

–

400

VDD = 12 V, RL = 820 Ω,

CL = 20 pF

RthJSB

case

SOT-89A,

SOT-89B

Thermal Resistance Junction to

Substrate Backside

–

150

200

K/W

Fiberglass Substrate

30 mm x 10 mm x 1.5mm,

pad size see Fig. 8

RthJS

case

TO-92UA

Thermal Resistance

Junction to Soldering Point

–

150

200

K/W

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