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ESDALC12-1T2 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDALC12-1T2 Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics ESDALC12-1T2 2/11 Doc ID 15025 Rev 3 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage - IEC 61000-4-2 Air discharge Contact discharge 25 20 kV PPP Peak pulse power dissipation (8/20 µs) (1) Tj initial = Tamb 50 W IPP Peak pulse current (8/20 µs)(1) 2A Tj Operating junction temperature range - 40 to + 125 °C Tstg Storage temperature range - 55 to +150 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage V = Clamping voltage R = Dynamic impedance I = Peak pulse current I = Breakdown current T = Voltage temperature coefficient V = Forward voltage drop BR RM RM RM CL d PP R F α I V I F I RM I PP V RM V F V BR Slope = 1/Rd V CL Table 2. Electrical characteristics (Tamb = 25 °C) Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 12 14 V IRM VRM = 10 V 200 nA Rd 1 A to 3 A, 8/20 µs 1.9 Ω VCL IPP = 1 A, 8/20µs 20 V CVR = 0 V DC, F = 1 MHz, VOSC = 30 mVRMS 15 18 pF |
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