BGF844 datasheet(5/12 Pages) PHILIPS

5 / 12 page

2003 Jun 06

Philips Semiconductors

Product speciﬁcation

GSM800 EDGE power module

BGF844

handbook, halfpage

30.4

28.4

29.6

29.2

28.8

MBL776

PL (W)

(dB)

(%)

Fig.6

CW gain power and efficiency as functions

of load power; typical values.

f = 882 MHz.

handbook, halfpage

29.6

28.8

28.4

29.2

MBL777

(dB)

PL (W)

(%)

Fig.7

Two tone gain power and efficiency as

functions of load power; typical values.

f1 = 882 MHz; f2 = 883 MHz.

handbook, halfpage

−20

−70

−30

−40

−50

−60

MBL778

dim

(dBc)

PL (AV) (W)

Fig.8

Two tone intermodulation distortion as a

function of average load power; typical

values.

f1 = 882 MHz; f2 = 883 MHz.

handbook, halfpage

750

850

950

1050

−30

−6

−12

−18

−24

MBL779

s21

(dB)

s11

(dB)

s11

s21

s11

f (kHz)

Fig.9 s-parameters as a function of frequency.

BGF844 Datasheet(PDF) 5 Page - NXP Semiconductors

BGF844 Datasheet(HTML) 5 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL