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BGF844 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BGF844 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 2003 Jun 06 4 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 handbook, halfpage 0 4 8 12 16 20 30 29.6 Gp (dB) PL (AV)(W) Gp η η (%) 28.8 28.4 29.2 48 36 12 0 24 MBL772 Fig.2 GSM EDGE power gain and efficiency as functions of load power; typical values. f = 882 MHz. handbook, halfpage −58 04 12 −68 8 26 10 −66 −64 −62 −60 MBL773 PL (AV) (W) ACPR (dBc) Fig.3 GSM EDGE ACPR at 400 kHz as a function of load power; typical values. f = 882 MHz. Fig.3 handbook, halfpage 04 12 4 EVM (%) PL (AV) (W) 3 1 0 2 8 26 10 MBL774 Fig.4 GSM EDGE rms EVM as a function of average load power; typical values. f = 882 MHz. handbook, halfpage 04 12 12 0 4 8 2 6 10 8 26 10 PL (AV) (W) EVM (%) MBL775 Fig.5 GSM EDGE peak EVM as function of average load power; typical values. f = 882 MHz. |
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