BGF844 datasheet(3/12 Pages) PHILIPS

3 / 12 page

2003 Jun 06

Philips Semiconductors

Product speciﬁcation

GSM800 EDGE power module

BGF844

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

CHARACTERISTICS

Tmb =25 °C; VS = 26 V; PL = 2.5 W; f = 869 to 894 MHz; ZS =ZL =50 Ω; unless otherwise speciﬁed.

Note

1. GPi is small signal in-band gain.

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

DC supply voltage

−

input drive power

−

100

load power

−

Tstg

storage temperature

−30

+100

°C

Tmb

operating mounting base temperature

−20

+90

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

IDQ

quiescent current (pin 2)

PD = 0 mW

245

280

320

power gain

∆G

p freq

gain ﬂatness over frequency

range

−

0.2

∆G

p pwr

gain ﬂatness over power band PL = 25 mW up to 2.5 W

−0.8

−0.2

+0.2

GOB

out of band gain

small signal, PD = 0 dBm;

f < 869 MHz, f > 894 MHz

−−

GPi max +1

note 1

VSWRin

input VSWR

−

1.6:1

2:1

IMDr

reverse intermodulation

fi =fc ±200 kHz;

Pcarrier = 2.5 W;

Pinterference = −40 dBc;

−−67

−64

dBc

second harmonic

−−38

−34

dBc

third harmonic

−−61

−58

dBc

stability

VSWR

≤ 3 : 1 through all

phases; VS2 =25to28V

all spurious outputs more than 60 dB

below desired signal

ruggedness

VSWR = 10 : 1 through all

phases; PL =5W

no degradation in output power

EDGE (PL = 2.5 W average)

efﬁciency

−

SR200

spectral regrowth;

EDGE GSM signal

200 kHz

−−36

−35

dBc

SR400

400 kHz

−−65

−63

dBc

SR600

600 kHz

−−75

−73

dBc

EVMrms

rms EDGE signal distortion

−

0.4

1.2

EVMM

peak EDGE signal distortion

−

1.2

Intermodulation distortion (PL = 2.5 W average)

third order intermodulation

carrier spacing = 200 kHz

−−45

−

dBc

ﬁfth order intermodulation

−−52

−

dBc

seventh order intermodulation

−−60

−

dBc

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