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AST20S Datasheet(PDF) 28 Page - Advanced Semiconductor Business Inc. |
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AST20S Datasheet(HTML) 28 Page - Advanced Semiconductor Business Inc. |
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28 / 41 page ![]() 28/41 ASB Inc. sales@asb.co.kr Tel: +82-42-528-7225 February 2017 AST20S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +0dBm/tone separated by 1MHz. 2) TYP 1) : R2 = 8.2KΩ, TYP2) : R2 = 5.1KΩ 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 -40 -30 -20 -10 0 10 20 30 40 S12 S22 S11 S21 Frequency (MHz) Parameter Symbol Test Conditions TYP1). TYP2). Unit Power Gain Gp F = 1472 GHz 15.0 15.5 dB Noise Figure NF F = 1472 GHz 0.45 0.5 dB Input Return Loss RLin F = 1472 GHz -10 -10 dB Output Return Loss RLout F = 1472 GHz -13 -15 dB 1 dB Gain Compression Output Power Po(1dB) F = 1472 GHz 14 17 dBm 3rd Intercept Point Output Power1) OIP3 F = 1472 GHz 29.5 32.0 dBm Circuit Current Id F = 1472 GHz Non-RF 20 45 mA Schematic S-parameters & K-factor APPLICATION CIRCUIT GPS 1472 MHz +5V Board Layout (FR4, 23x13 mm2, 0.8T) Note: 1) The length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. P1 Length: 2.5 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Top |
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