AST20S datasheet(12/41 Pages) ASB

12 / 41 page

12/41

ASB Inc.

 sales@asb.co.kr  Tel: +82-42-528-7225

February 2017

AST20S

High Gain, Low Noise Amplifier

1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Power Gain

F = 2.14 GHz

12.5

Noise Figure

F = 2.14 GHz

0.9

Input Return Loss

RLin

F = 2.14 GHz

-13

Output Return Loss

RLout

F = 2.14 GHz

-13

1 dB Gain Compression

Output Power

Po(1dB)

F = 2.14 GHz

18.5

dBm

3rd Intercept Point

Output Power1)

OIP3

F = 2.14 GHz

33.5

dBm

Circuit Current

F = 2.14 GHz

Non-RF

Schematic

S-parameters & K-factor

APPLICATION CIRCUIT

WCDMA

2140 MHz

+5 V

Board Layout (FR4, 23x13 mm2, 0.8T)

Note: 1) The length of the strip line P1 is given as below at

the PCB with Er = 4.5 and T = 0.8 mm.

P1 Length: 2.5 mm, Width: 0.3 mm

2) Gain and S11 are in trade-off and varied with the length of P1

Bottom

Top

1800

1900

2000

2100

2200

2300

2400

Frequency (MHz)

1800

1900

2000

2100

2200

2300

2400

-20

-15

-10

-5

Frequency (MHz)

1800

1900

2000

2100

2200

2300

2400

-20

-15

-10

-5

Frequency (MHz)

500

1000

1500

2000

2500

3000

3500

Frequency (MHz)

AST20S Datasheet(PDF) 12 Page - Advanced Semiconductor Business Inc.

AST20S Datasheet(HTML) 12 Page - Advanced Semiconductor Business Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41

Datasheet Download

Link URL