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SI5010 Datasheet(PDF) 10 Page - List of Unclassifed Manufacturers |
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SI5010 Datasheet(HTML) 10 Page - List of Unclassifed Manufacturers |
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10 / 16 page ![]() Si 50 10 10 Preliminary Rev. 0.31 Figure 6. Jitter Tolerance Specification Jitter Transfer The Si5010 is fully compliant with the relevant Bellcore/ ITU specifications related to SONET/SDH jitter transfer. Jitter transfer is defined as the ratio of output signal jitter to input signal jitter as a function of jitter frequency (see Figure 7). These measurements are made with an input test signal that is degraded with sinusoidal jitter whose magnitude is defined by the mask in Figure 6. Jitter Generation The Si5010 meets all relevant specifications for jitter generation proposed for SONET/SDH equipment. The jitter generation specification defines the amount of jitter that may be present on the recovered clock and data outputs when a jitter free input signal is provided. The Si5010 typically generates less than 1.6 mUIRMS of jitter when presented with jitter-free input data. Figure 7. Jitter Transfer Specification Power Down The Si5010 provides a power down pin, PWRDN/CAL, that disables the device. When the PWRDN/CAL pin is driven “high”, the positive and negative terminals of CLKOUT and DOUT are each tied to VDD through 100 Ω on-chip resistors. This feature is useful in reducing power consumption in applications that employ redundant serial channels. When PWRDN/CAL is released (set to “low”) the digital logic resets to a known initial condition, recalibrates the DSPLL, and will begin to lock to the data stream. Note: LOL is not asserted when the device is in the power down state. Device Grounding The Si5010 uses the GND pad on the bottom of the 20-pin micro leaded package (MLP) for device ground. This pad should be connected directly to the analog supply ground. See Figures 10 and 11 for the ground (GND) pad location. Bias Generation Circuitry The Si5010 makes use of an external resistor to set internal bias currents. The external resistor allows precise generation of bias currents which significantly reduces power consumption versus traditional implementations that use an internal resistor. The bias generation circuitry requires a 10 k Ω (1%) resistor connected between REXT and GND. f0 f1 f2 f3 ft F requency 0.15 1.5 15 Sinusoidal Input Jitter (U I p-p) S lo p e = 20 d B /D ecad e SONET Data Rate F0 (Hz) F1 (Hz) F2 (Hz) F3 (kHz) Ft (kHz) OC-12 OC-3 10 10 30 30 300 300 25 6.5 250 65 Fc Frequency Jitter Transfer 0.1 dB Acceptable Range 20 dB/Decade Slope SO NET Data Rate OC-12 OC-3 Fc (kH z) 500 130 |
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