Philips Semiconductors

PMWD18UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 02 — 23 February 2004

6 of 12

9397 750 12706

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain source on-state resistance

factor as a function of junction temperature.

003aaa260

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

VDS (V)

ID

(A)

1 V

1.1 V

1.2 V

VGS = 1.3 V

1.8 V

4.5 V

003aaa261

0

2

4

6

8

10

0

0.5

1

1.5

2

VGS (V)

ID

(A)

Tj = 150 °C

25

°C

003aaa262

0

40

80

120

160

01

23

45

ID (A)

RDSon

(m

Ω)

2.5 V

1.1 V

1.2 V

1.3 V

4.5 V

VGS = 1.8 V

03aa27

0

0.5

1

1.5

2

-60

0

60

120

180

Tj (°C)

a

a

R

DSon

R

DSon 25

°C

()

------------------------------

=