Philips Semiconductors

PMWD18UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Product data

Rev. 02 — 23 February 2004

7 of 12

9397 750 12706

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

03aj65

0

0.2

0.4

0.6

0.8

1

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

min

typ

03aj64

10-6

10-5

10-4

10-3

0

0.2

0.4

0.6

0.8

1

VGS (V)

ID

(A)

min

typ

003aaa263

10

102

103

104

10

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss

003aaa264

0

1

2

3

4

5

0

0.2

0.4

0.6

0.8

1

VSD (V)

IS

(A)

25

°C

Tj = 150 °C