PMWD18UN datasheet(1/12 Pages) PHILIPS

Part #	PMWD18UN

Description	Dual N-channel mTrenchMOS ultra low level FET

PDF	12 Pages

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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PMWD18UN

Dual N-channel

µTrenchMOS™ ultra low level FET

Rev. 02 — 23 February 2004

Product data

M3D647

1.

Product proﬁle

1.1 Description

Dual common drain N-channel enhancement mode ﬁeld-effect transistor in a plastic

package using TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2.

Pinning information

s Surface mounted package

s Low proﬁle

s Very low threshold

s Fast switching.

s Portable appliances

s PCMCIA cards

s Battery management

s Load switching.

s VDS ≤ 30 V

s ID ≤ 7.8 A

s Ptot ≤ 2.3 W

s RDSon ≤ 21.5 mΩ.

Table 1:

Pinning - SOT530-1 (TSSOP8), simpliﬁed outline and symbol

Description

Simpliﬁed outline

Symbol

1,8

drain (d)

SOT530-1 (TSSOP8)

2,3

source1 (s1)

4

gate1 (g1)

5

gate2 (g2)

6,7

source2 (s2)

MBK885

Top view

14

85

mbl600

d

g1

s1

g2

s2

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