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PC133 Datasheet(PDF) 5 Page - Samsung semiconductor |
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PC133 Datasheet(HTML) 5 Page - Samsung semiconductor |
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5 / 11 page ![]() M464S3254DTS Rev. 0.0 Jan. 2002 PC133/PC100 SODIMM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C) Parameter Symbol Test Condition Version Unit Note -7C -7A -1H -1L Operating current (One bank active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 560 520 520 520 mA 1 Precharge standby cur- rent in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 16 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 16 Precharge standby cur- rent in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 160 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 80 Active standby current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 48 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 48 Active standby current in non power-down mode (One bank active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 240 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 200 mA Operating current (Burst mode) ICC4 IO = 0 mA Page burst 4banks Activated. tCCD = 2CLKs 680 680 640 640 mA 1 Refresh current ICC5 tRC ≥ tRC(min) 1000 920 880 880 mA 2 Self refresh current ICC6 CKE ≤ 0.2V C 24 mA L 12 mA 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ). Notes : |
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