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PC133 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # PC133
Description  32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
PDF  11 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

PC133 Datasheet(HTML) 5 Page - Samsung semiconductor

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M464S3254DTS
Rev. 0.0 Jan. 2002
PC133/PC100 SODIMM
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-7C
-7A
-1H
-1L
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
560
520
520
520
mA
1
Precharge standby cur-
rent in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
16
mA
ICC2PS
CKE & CLK
≤ VIL(max), tCC = ∞
16
Precharge standby cur-
rent in non power-down
mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
160
mA
ICC2NS
CKE
≥ VIH(min), CLK
≤ VIL(max), tCC = ∞
Input signals are stable
80
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
48
mA
ICC3PS
CKE & CLK
≤ VIL(max), tCC = ∞
48
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
240
mA
ICC3NS
CKE
≥ VIH(min), CLK
≤ VIL(max), tCC = ∞
Input signals are stable
200
mA
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4banks Activated.
tCCD = 2CLKs
680
680
640
640
mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
1000
920
880
880
mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
C
24
mA
L
12
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(VIH/VIL=VDDQ/VSSQ).
Notes :



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