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LTC6409 Datasheet(PDF) 4 Page - Analog Devices |
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LTC6409 Datasheet(HTML) 4 Page - Analog Devices |
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4 / 24 page ![]() LTC6409 4 6409fb For more information www.linear.com/LTC6409 ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS SR Slew Rate Differential Output, VOUTDIFF = 4VP-P +OUT Rising (–OUT Falling) +OUT Falling (–OUT Rising) 3300 1720 1580 V/µs V/µs V/µs GBW Gain-Bandwidth Product RI = 25Ω, RF = 10kΩ, fTEST = 100MHz l 9.5 8 10 GHz GHz f–3dB –3dB Frequency RI = RF = 150Ω, RLOAD = 400Ω, CF = 1.3pF 2 GHz f0.1dB Frequency for 0.1dB Flatness RI = RF = 150Ω, RLOAD = 400Ω , CF = 1.3pF 600 MHz FPBW Full Power Bandwidth VOUTDIFF = 2VP-P 550 MHz HD2 HD3 25MHz Distortion Differential Input, VOUTDIFF = 2VP-P, RI = RF = 150Ω, RLOAD = 400Ω 2nd Harmonic 3rd Harmonic –104 –106 dBc dBc 100MHz Distortion Differential Input, VOUTDIFF = 2VP-P, RI = RF = 150Ω, RLOAD = 400Ω 2nd Harmonic 3rd Harmonic –93 –88 dBc dBc HD2 HD3 25MHz Distortion Single-Ended Input, VOUTDIFF = 2VP-P, RI = RF = 150Ω, RLOAD = 400Ω 2nd Harmonic 3rd Harmonic –101 –103 dBc dBc 100MHz Distortion Single-Ended Input, VOUTDIFF = 2VP-P, RI = RF = 150Ω, RLOAD = 400Ω 2nd Harmonic 3rd Harmonic –88 –93 dBc dBc IMD3 3rd Order IMD at 25MHz f1 = 24.9MHz, f2 = 25.1MHz VOUTDIFF = 2VP-P Envelope, RI = RF = 150Ω, RLOAD = 400Ω –110 dBc 3rd Order IMD at 100MHz f1 = 99.9MHz, f2 = 100.1MHz VOUTDIFF = 2VP-P Envelope, RI = RF = 150Ω, RLOAD = 400Ω –98 dBc 3rd Order IMD at 140MHz f1 = 139.9MHz, f2 = 140.1MHz VOUTDIFF = 2VP-P Envelope, RI = RF = 150Ω, RLOAD = 400Ω –88 dBc OIP3 Equivalent OIP3 at 25MHz (Note 12) Equivalent OIP3 at 100MHz (Note 12) Equivalent OIP3 at 140MHz (Note 12) 59 53 48 dBm dBm dBm tS Settling Time VOUTDIFF = 2VP-P Step, RI = RF = 150Ω, RLOAD = 400Ω 1% Settling 1.9 ns The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. V+ = 5V, V– = 0V, VCM = VOCM = VICM = 1.25V, VSHDN = open. VS is defined as (V+ – V–). VOUTCM is defined as (V+OUT + V–OUT)/2. VICM is defined as (V+IN + V–IN)/2. VOUTDIFF is defined as (V+OUT – V–OUT). Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Input pins (+IN, –IN, VOCM, and SHDN) are protected by steering diodes to either supply. If the inputs should exceed either supply voltage, the input current should be limited to less than 10mA. In addition, the inputs +IN, –IN are protected by a pair of back-to-back diodes. If the differential input voltage exceeds 1.4V, the input current should be limited to less than 10mA. Note 3: A heat sink may be required to keep the junction temperature below the absolute maximum rating when the output is shorted indefinitely. Note 4: The LTC6409C/LTC6409I are guaranteed functional over the temperature range of –40°C to 85°C. The LTC6409H is guaranteed functional over the temperature range of –40°C to 125°C. Note 5: The LTC6409C is guaranteed to meet specified performance from 0°C to 70°C. The LTC6409C is designed, characterized and expected to meet specified performance from –40°C to 85°C, but is not tested or QA sampled at these temperatures. The LTC6409I is guaranteed to meet specified performance from –40°C to 85°C. The LTC6409H is guaranteed to meet specified performance from –40°C to 125°C. Note 6: Input bias current is defined as the average of the input currents flowing into the inputs (–IN and +IN). Input offset current is defined as the difference between the input currents (IOS = IB+ – IB–). |
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