THCV213 datasheet(6/19 Pages) THINE

6 / 19 page

THCV213-214_Rev.2.40_E

THine Electronics, Inc.

6/19

Electrical Characteristics

CMOS/TTL DC Specifications

THCV213: VDD=VDD=LVDSVDD=PLLVDD, THCV214: VDD=VDD=VDDO=LVDSVDD=PLLVDD

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIH

High Level Input Voltage

2.0

VDD

VIL

Low Level Input Voltage

GND

0.8

VOH

High Level Output Voltage

VDD= 3.0V ~ 3.6V

IOH = -4mA

2.4

VOL

Low Level Output Voltage

VDD= 3.0V ~ 3.6V

IOL=4mA

0.4

IIL

Input Leak Current

0V ≤ VIN ≤ VDD

±10

THCV213 DC Specifications

VDD=VDD=LVDSVDD=PLLVDD

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VOD

Differential Output Voltage

RL=100Ω,

PRE<1:0>=L,L

250

350

450

ΔVOD

Change in VOD between

complementary output states

RL=100Ω,

PRE<1:0>=L,L

VOC

Common Mode Voltage

RL=100Ω,

PRE<1:0>=L,L

1.125

1.25

1.375

ΔVOC

Change in VOC between

complementary output states

RL=100Ω,

PRE<1:0>=L,L

IOS

Output Short Circuit Current

VOUT=0V,RL=100Ω

IOZ

Output TRI-STATE Current

PDWN=L,

VOUT=0V to VDD

±10

THCV214 DC Specifications

VDD=VDD=VDDO=LVDSVDD=PLLVDD

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VTH

Differential Input High Threshold

VIC = +1.2V

100

VTL

Differential Input Low Threshold

-100

IILD

Differential Input Leakage Current

VIN = 2.4V/0V

VDD = 3.6V

±10

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