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MP6531A Datasheet(PDF) 11 Page - Monolithic Power Systems |
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MP6531A Datasheet(HTML) 11 Page - Monolithic Power Systems |
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11 / 18 page ![]() MP6531A – 5V - 60V, THREE-PHASE BLDC MOTOR PRE-DRIVER MP6531A Rev. 1.02 www.MonolithicPower.com 11 6/20/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. OPERATION The MP6531A is a three-phase BLDC motor pre-driver that drives three external N-channel MOSFET half-bridges with an 0.8A source and 1A of sink current capability. The MP6531A operates over a wide input voltage range of 5V to 60V, generating a boosted gate drive voltage when the input supply is below 12V. The MP6531A features low-power sleep mode, which disables the device and draws a very low supply current. The MP6531A provides several flexible functions, such as adjustable dead-time control and over-current protection, which allow the device to cover a wide range of applications. Power-Up Sequence The power-up sequence is initiated by the application of voltage to VIN. To initiate power- up, VIN must be above the under-voltage lockout threshold (VUVLO). After power-up begins, the VREG supply begins operating. VREG must rise above VREG_RISE before the device becomes functional. The power-up process takes between 1ms and 2ms, after which the MP6531A responds to the logic inputs and drives the outputs. Gate Drive Power Supplies Gate drive voltages are generated from the input power (VIN). A regulated charge pump voltage doubler circuit supplies a voltage of approximately 11.5V to VREG. This voltage is used for the low-side gate drive supply. The charge pump requires external capacitors between CPA and CPB and from VREG to ground. The high-side gate drive is generated by a combination of a bootstrap capacitor and an internal trickle charge pump. Bootstrap capacitors are charged to VREG when the low- side MOSFET (LS-FET) is turned on. This charge is then used to drive the high-side MOSFET (HS-FET) gate when it is turned on. To keep the bootstrap capacitors charged and allow for operation at 100% duty cycle, an internal trickle charge pump supplies a small current (about 5µA) to overcome leakages that would discharge the bootstrap capacitors. Sleep Mode (nSLEEP Input) Driving nSLEEP low puts the device into a low- power sleep state. In this state, all internal circuits are disabled, and all inputs are ignored. nSLEEP has an internal pull-down resistor, so the pin must be driven high for the MP6531A to operate. When exiting sleep mode, the MP6531A initiates the power-up sequence. Input Logic HC, HB, or HA are used to control the gate drive for the HS-FET of each phase. LC, LB, or LA are used to control the gate drive for the low-side FET. Positive dead time is enforced by the device, and if both HX and LX are driven high, neither FET is driven (see Table 1). Table 1: Input Logic Truth Table LX HX SHX H H High impedance H L GND L H VIN L L High impedance nFAULT The nFAULT output reports to the system when a fault condition (such as output short-circuit, over-current, or over-temperature) is detected. nFAULT is an open-drain output and is driven low when a fault condition occurs. If the fault condition is released, nFAULT is pulled high by an external pull-up resistor. Short-Circuit Protection (SCP) (VDS Sensing) To protect the power stage from damage caused by high currents, VDS sensing circuitry is implemented in the MP6531A. The voltage drop across each MOSFET is sensed. This voltage is proportional to the RDS(ON) of the MOSFET and the IDS current passing through it. If this voltage exceeds the voltage supplied to the OC_REF terminal, a short circuit is recognized. In the event of a short circuit, the MP6531A disables all of the gate drive outputs. nFAULT is driven active low. The device remains latched off until it is reset by nSLEEP or VIN UVLO. Short circuit protection can be disabled by connection a 100k Ω resistor from VREG to the OCREF pin. |
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