| Electronic Components Datasheet Search |
|
MP6531A Datasheet(PDF) 13 Page - Monolithic Power Systems |
|
|
|||||||||||||||||||||||||||||
MP6531A Datasheet(HTML) 13 Page - Monolithic Power Systems |
|
13 / 18 page ![]() MP6531A – 5V - 60V, THREE-PHASE BLDC MOTOR PRE-DRIVER MP6531A Rev. 1.02 www.MonolithicPower.com 13 6/20/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. APPLICATION INFORMATION Input Voltage (VIN) VIN supplies all power to the device. VIN must be properly bypassed with a capacitor to ground. The normal operating range of VIN is between 5V and 60V. VIN should never be allowed to exceed the absolute maximum ratings, even in a short-term transient condition, or damage to the device may result. In some cases, especially where mechanical energy can turn a motor into a generator, it may be necessary to use some form of over-voltage protection, such as a TVS diode, between VIN and ground. Component Selection MOSFET Selection Correctly selecting the power MOSFETs used to drive a motor is crucial to designing a successful motor drive. The MOSFET must have a VDS breakdown voltage higher than the supply voltage. A considerable margin (10-15V) should be added to prevent MOSFET damage from transient voltages caused by parasitic inductances in the PCB layout and wiring. For example, for 24V power supply applications, MOSFETs with a breakdown voltage of 40-60V minimum are recommended. More margin is desirable in high-current applications, since the transients caused by parasitic inductances may be larger. There are also conditions such as regenerative braking that can inject current back into the power supply. Care must be taken so that this does not increase the power supply voltage enough to damage components. The MOSFETs must be able to safely pass the current needed to run the motor. The highest current condition (which is normally when the motor is first started or stalled) must be supported. This is called the stall current of the motor. Similar to the current capability of the MOSFET is the RDS(ON), which is the resistance of the MOSFET when it is fully turned on. The MOSFET dissipates power proportional to the RDS(ON) and the motor current, shown in Equation (1): P = I 2R (1) RDS(ON) must be selected so that for the desired motor current, the heat generated in this power can be dissipated safely. In some cases, this may require special PCB design considerations and/or external heatsinks to be used for the MOSFETs. Consideration should be made for the safe operating area (SOA) of the MOSFETs during fault conditions such as a short circuit. The IC acts quickly in the event of a short, but there is still a very short amount of time (about 3µs) where large currents can flow in the MOSFETs while the protection circuits recognize the fault and disable the outputs. External Capacitor Selection The MP6531A can provide a gate drive voltage (VREG) of 10-12V, even if the input supply voltage drops as low as 5V. This gate drive voltage is generated by a charge pump inside the part, which uses external capacitors. The charge pump flying capacitor (CCP) should have a capacitance of 470nF. The capacitor must be rated to withstand the maximum VIN power supply voltage. An X7R or X5R ceramic capacitor is recommended. With a 470nF capacitor, VREG can output approximately 10mA when VIN is 5V. If operation below 10V is not needed, a 220nF capacitor can be used. To provide the large peak currents needed to turn on the HS-FET, use bootstrap capacitors. These capacitors are charged when the output is driven low, and then the charge in the bootstrap capacitor is used to turn on the HS- FET when the output is driven high. Note that an internal charge pump keeps the bootstrap capacitor charged when the output is held high for an extended period. Bootstrap capacitors are selected depending on the MOSFET total gate charge. When the HS- FET is turned on, the charge stored in the bootstrap capacitor is transferred to the HS- FET gate. As a simplified approximation, the minimum bootstrap capacitance can be estimated with Equation (2): CBOOT > 8*QG (2) Where QG is the total gate charge of the MOSFET in nC, and CBOOT is in nF. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |