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MP6531A Datasheet(PDF) 13 Page - Monolithic Power Systems

Part # MP6531A
Description  5V - 60V, Three-Phase, Brushless, DC Motor Pre-Driver
PDF  18 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6531A Datasheet(HTML) 13 Page - Monolithic Power Systems

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MP6531A – 5V - 60V, THREE-PHASE BLDC MOTOR PRE-DRIVER
MP6531A Rev. 1.02
www.MonolithicPower.com
13
6/20/2017
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2017 MPS. All Rights Reserved.
APPLICATION INFORMATION
Input Voltage (VIN)
VIN supplies all power to the device. VIN must
be properly bypassed with a capacitor to
ground. The normal operating range of VIN is
between 5V and 60V.
VIN should never be allowed to exceed the
absolute maximum ratings, even in a short-term
transient condition, or damage to the device
may result. In some cases, especially where
mechanical energy can turn a motor into a
generator, it may be necessary to use some
form of over-voltage protection, such as a TVS
diode, between VIN and ground.
Component Selection
MOSFET Selection
Correctly selecting the power MOSFETs used
to drive a motor is crucial to designing a
successful motor drive. The MOSFET must
have a VDS breakdown voltage higher than the
supply voltage. A considerable margin (10-15V)
should be added to prevent MOSFET damage
from transient voltages caused by parasitic
inductances in the PCB layout and wiring. For
example, for 24V power supply applications,
MOSFETs with a breakdown voltage of 40-60V
minimum are recommended. More margin is
desirable in high-current applications, since the
transients caused by parasitic inductances may
be larger. There are also conditions such as
regenerative braking that can inject current
back into the power supply. Care must be taken
so that this does not increase the power supply
voltage enough to damage components.
The MOSFETs must be able to safely pass the
current needed to run the motor. The highest
current condition (which is normally when the
motor is first started or stalled) must be
supported. This is called the stall current of the
motor.
Similar to the current capability of the MOSFET
is the RDS(ON), which is the resistance of the
MOSFET when it is fully turned on. The
MOSFET dissipates power proportional to the
RDS(ON) and the motor current, shown in
Equation (1):
P = I
2R
(1)
RDS(ON) must be selected so that for the desired
motor current, the heat generated in this power
can be dissipated safely. In some cases, this
may require special PCB design considerations
and/or external heatsinks to be used for the
MOSFETs.
Consideration should be made for the safe
operating area (SOA) of the MOSFETs during
fault conditions such as a short circuit. The IC
acts quickly in the event of a short, but there is
still a very short amount of time (about 3µs)
where large currents can flow in the MOSFETs
while the protection circuits recognize the fault
and disable the outputs.
External Capacitor Selection
The MP6531A can provide a gate drive voltage
(VREG) of 10-12V, even if the input supply
voltage drops as low as 5V. This gate drive
voltage is generated by a charge pump inside
the part, which uses external capacitors.
The charge pump flying capacitor (CCP) should
have a capacitance of 470nF. The capacitor
must be rated to withstand the maximum VIN
power supply voltage. An X7R or X5R ceramic
capacitor is recommended. With a 470nF
capacitor, VREG can output approximately
10mA when VIN is 5V. If operation below 10V is
not needed, a 220nF capacitor can be used. To
provide the large peak currents needed to turn
on the HS-FET, use bootstrap capacitors.
These capacitors are charged when the output
is driven low, and then the charge in the
bootstrap capacitor is used to turn on the HS-
FET when the output is driven high. Note that
an internal charge pump keeps the bootstrap
capacitor charged when the output is held high
for an extended period.
Bootstrap capacitors are selected depending on
the MOSFET total gate charge. When the HS-
FET is turned on, the charge stored in the
bootstrap capacitor is transferred to the HS-
FET gate. As a simplified approximation, the
minimum
bootstrap
capacitance
can
be
estimated with Equation (2):
CBOOT > 8*QG
(2)
Where QG is the total gate charge of the
MOSFET in nC, and CBOOT is in nF.



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