AD8092ARM datasheet(5/16 Pages) AD

5 / 16 page

–5–

AD8091/AD8092

REV. A

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . See Figure 1

Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . .

±V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .

±2.5 V

Output Short Circuit Duration . . . . . . . . . . . . . See Figure 1

Storage Temperature Range . . . . . . . . . . .

–65

°C to +125°C

Operating Temperature Range . . . . . . . . . . . –40

°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . 300

°C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those indicated in the operational

section of this speciﬁcation is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8091/AD8092

package is limited by the associated rise in junction temperature

(TJ) on the die. The plastic encapsulating the die will locally reach

the junction temperature. At approximately 150

°C, which is the

glass transition temperature, the plastic will change its properties.

Even temporarily exceeding this temperature limit may change the

stresses that the package exerts on the die, permanently shifting the

parametric performance of the AD8091/AD8092. Exceeding a

junction temperature of 175

°C for an extended period of time can

result in changes in the silicon devices, potentially causing failure.

The still-air thermal properties of the package ( JA), ambient

temperature (TA), and the total power dissipated in the package

(PD) can be used to determine the junction temperature of the die.

The junction temperature can be calculated as follows:

()

The power dissipated in the package (PD) is the sum of the quies-

cent power dissipation and the power dissipated in the package

due to the load drive for all outputs. The quiescent power is the

voltage between the supply pins (VS) times the quiescent current

(IS). Assuming the load (RL) is referenced to midsupply, then the

total drive power is VS /2

IOUT, some of which is dissipated in

the package and some in the load (VOUT

IOUT). The difference

between the total drive power and the load power is the drive

power dissipated in the package.

PD = quiescent power + (total drive power – load power)

OUT

D =×

()+×





















–

RMS output voltages should be considered. (If RL is referenced

to VS–, as in single-supply operation, then the total drive power is

IOUT.)

If the rms signal levels are indeterminate, then consider the

worst case, when VOUT = VS /4 for RL to midsupply:

=×

()+









(In single-supply operation with RL referenced to VS–, worst case is

VOUT = VS /2.)

Airflow will increase heat dissipation, effectively reducing JA. Also,

more metal directly in contact with the package leads from metal

traces, through holes, ground, and power planes will reduce the JA.

Care must be taken to minimize parasitic capacitances at the input

leads of high-speed op amps as discussed in the board layout

section.

Figure 1 shows the maximum safe power dissipation in the package

versus the ambient temperature for the SOIC-8 (125

°C/W),

SOT23-5 (180

°C/W), and µSOIC-8 (150°C/W) packages on a

JEDEC standard four-layer board.

AMBIENT TEMPERATURE – C

2.0

1.0

–30

1.5

0.5

–10

TJ = 150 C

SOIC-8

–20

SOT23-5

–40

Figure 1. Maximum Power Dissipation vs. Temperature

for a Four-Layer Board

AD8092ARM Datasheet(PDF) 5 Page - Analog Devices

AD8092ARM Datasheet(HTML) 5 Page - Analog Devices

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL