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MSM548262-80JS Datasheet(PDF) 35 Page - OKI electronic componets |
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MSM548262-80JS Datasheet(HTML) 35 Page - OKI electronic componets |
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35 / 37 page ![]() ¡ Semiconductor MSM548262 35/37 Split Data Transfer and QSF The MSM548262 features a bidirectional split data transfer capability between the RAM and SAM. During split data transfer operation, the serial register is split into two halves which can be controlled independently. Split read or split write transfer operation can be performed to or from one half of the serial register, while serial data can be shifted into or out of the other half of the serial register. The most significant column address location (A8C) is controlled internally to determines which half of the serial register will be reloaded from the RAM. QSF is an output which indicates which half of the serial register is in an active state. QSF changes state when the last SC clock is applied to active split SAM. Split Read Transfer: RAS falling edge --- CAS = WE = DSF = "H", TRG = "L" Split read transfer consists of loading 256 words by 8 bits of data from a selected row of the split RAM into the corresponding non-active split SAM register. Serial data can be shifted out from the other half of the split SAM register simultaneously. During split read transfer operation, the RAM port input clocks do not have to be synchronized with the serial clock SC, thus eliminating timing restrictions as in the case of real time read transfers. A split read transfer can be performed after a delay of tSTS from the change of state of the QSF output is satisfied. Conventional (non-split) read transfer operation must precede split read transfer cycles. Masked Split Write Transfer: RAS falling edge --- CAS = DSF = "H", TRG = WE ="L" Split write transfer consists of loading 256 words by 8 bits of data from the non-active split SAM register into a selected row of the corresponding split RAM. Serial data can be shifted into the other half of the split SAM register simultaneously. During split write transfer operation, the RAM port input clocks do not have to be synchronized with the serial clock SC, thus allowing for real time transfer. This write transfer operation, which is the same as a mask write operation in RAM, can be selectively controlled for 8 DQis by inputing the mask data from DQ1 - DQ8 at the falling edge of RAS. A split write transfer can be performed after a delay of tSTS from the change of state of the QSF output is satisfied. A masked write transfer operation must precede split write transfer. The purpose is to switch the SAM port from output mode to input mode, and to set the initial TAP location prior to split write transfer operations. POWER UP Power must be applied to the RAS and TRG input signals to pull them "high" before, or at the same time as, the VCC supply is turned on. After power-up, a pause of 200 ms minimum is required with RAS and TRG held "high". After the pause, a minimum of 8 RAS and 8 SC dummy cycles must be performed to stabilize the internal circuitry, before valid read, write or transfer operations can begin. During the initialization period, the TRG signal must be held "high". If the internal refresh counter is used, a minimum 8 CAS before RAS cycles are required instead of 8 RAS cycles. (NOTE) INITIAL STATE AFTER POWER UP The initial state can not be guaranteed for various power up conditions and input signal levels. Therefore, it is recommended that the initial state be set after the initialization of the device is performed and before valid operations begin. |
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