ACT108W datasheet(3/14 Pages) WEEN

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WeEn Semiconductors

ACT108W-600D

AC Thyristor power switch

ACT108W-600D

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Product data sheet

21 August 2018

3 / 14

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDRM

repetitive peak off-state

voltage

600

IT(RMS)

RMS on-state current

full sine wave; Tsp ≤ 112 °C; Fig. 1; Fig. 2;

Fig. 3

0.8

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

8.8

ITSM

non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

I2t

I2t for fusing

tp = 10 ms; SIN

0.32

A²s

dIT/dt

rate of rise of on-state

current

IG = 10 mA

A/µs

IGM

peak gate current

t = 20 μs

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

0.1

Tstg

storage temperature

-40

150

°C

junction temperature

125

°C

VPP

peak pulse voltage

Tj = 25 °C; non-repetitive, off-state; Fig. 6

003aac803

0.4

0.6

0.2

0.8

1.0

Ptot

(W)

IT(RMS) (A)

0.8

0.4

0.6

0.2

conduction

angle

(degrees)

form

factor

120

180

2.816

1.967

1.570

1.329

1.110

Tsp(max)

(°C)

120

α = 180°

125

122

119

116

113

110

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values

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