FFB3946D datasheet(1/12 Pages) FS

Part #	FFB3946D

Description	Dual General Purpose Transistors

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	FS [First Silicon Co., Ltd]

Direct Link	http://www.firstsilicon.co.kr/

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1 / 12 page

1

3

2

SOT -363/SC-88

6

4

5

Dual General Purpose

Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

V CEO

Vdc

0

4

)

N

P

N

(

0

4

-

)

P

N

P

(

Collector-Base Voltage

VCBO

Vdc

0

6

)

N

P

N

(

0

4

-

)

P

N

P

(

Emitter-Base Voltage

V EBO

Vdc

0

.

6

)

N

P

N

(

0

.

5

-

)

P

N

P

(

Collector Current-Continuous

I C

mAdc

0

2

)

N

P

N

(

(PNP)

-200

Electrostatic Discharge

ESD

HBM>16000,

V

MM>2000

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Package Dissipation (1)

P D

150

mW

TA = 25°C

Thermal Resistance Junction

R θJA

833

°C/W

to Ambient

Junction and Storage

TJ,Tstg

–55 to +150

°C

Temperature Range

The FFB3946D device is a spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

• h

FE, 100–300

• Low V

CE(sat), < 0.4 V

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

*Q1 PNP

Q2 NPN

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

ORDERING INFORMATION

Device

Marking

Shipping

FFB3946DW1T1G

46

3000Units/Reel

4

6

5

3

1

2

Q2

Q1

FFB3946DW1T3G

46

10000Units/Reel

compliance with RoHS requirements.

We declare that the material of product

2008. 03. 10

1/12

SEMICONDUCTOR

TECHNICAL DATA

FFB3946D

Revision No : 0

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