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FFB3946D Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FFB3946D
Description  Dual General Purpose Transistors
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FFB3946D Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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ELECTRICALCHARACTERISTICS (TA =25°C unless otherwise noted)
x
a
M
n
i
M
l
o
b
m
y
S
c
it
si
r
e
t
c
a
r
a
h
C
Unit
OFFCHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
V(BR)CEO
Vdc
(IC = 1.0 mAdc, I B
–
0
4
)
N
P
N
(
)
0
=
(IC = –1.0 mAdc, I B
–
0
4
–
)
P
N
P
(
)
0
=
V
e
g
a
tl
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
–
r
o
t
c
el
l
o
C
(BR)CBO
Vdc
(IC = 10 µAdc, IE
–
0
6
)
N
P
N
(
)
0
=
(IC = –10 µAdc, IE
–
0
4
–
)
P
N
P
(
)
0
=
V
e
g
a
tl
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
–
r
e
tt
i
m
E
(BR)EBO
Vdc
(IE = 10 µAdc, IC
–
0
.
6
)
N
P
N
(
)
0
=
(IE = –10 µAdc, IC = 0)
(PNP)
–5.0
–
I
t
n
e
rr
u
C
ff
o
t
u
C
e
s
a
B
BL
nAdc
(VCE = 30 Vdc, V EB
0
5
–
)
N
P
N
(
)
c
d
V
0
.
3
=
(VCE = –30 Vdc, V EB
0
5
–
–
)
P
N
P
(
)
c
d
V
0
.
3
–
=
I
t
n
e
rr
u
C
ff
o
t
u
C
r
o
t
c
el
l
o
C
CEX
nAdc
(VCE = 30 Vdc, V EB
0
5
–
)
N
P
N
(
)
c
d
V
0
.
3
=
(VCE = –30 Vdc, V EB
0
5
–
–
)
P
N
P
(
)
c
d
V
0
.
3
–
=
ON CHARACTERISTICS (2)
h
n
i
a
G
t
n
e
rr
u
C
C
D
FE
–
(IC = 0.1 mAdc, V CE
–
0
4
)
N
P
N
(
)
c
d
V
0
.
1
=
(IC = 1.0 mAdc, V CE
–
0
7
)
c
d
V
0
.
1
=
(IC = 10 mAdc, V CE
0
0
3
0
0
1
)
c
d
V
0
.
1
=
(IC = 50 mAdc, V CE
–
0
6
)
c
d
V
0
.
1
=
(IC = 100 mAdc, V CE
–
0
3
)
c
d
V
0
.
1
=
(IC = –0.1 mAdc, V CE
–
0
6
)
P
N
P
(
)
c
d
V
0
.
1
–
=
(IC = –1.0 mAdc, V CE
–
0
8
)
c
d
V
0
.
1
–
=
(IC = –10 mAdc, V CE
0
0
3
0
0
1
)
c
d
V
0
.
1
–
=
(IC = –50 mAdc, V CE
–
0
6
)
c
d
V
0
.
1
–
=
(IC = –100 mAdc, V CE
–
0
3
)
c
d
V
0
.
1
–
=
V
e
g
a
tl
o
V
n
o
it
a
r
u
t
a
S
r
e
tt
i
m
E
–
r
o
t
c
e
ll
o
C
CE(sat)
Vdc
(IC = 10 mAdc, I
B
2
.
0
–
)
N
P
N
(
)
c
d
A
m
0
.
1
=
(IC = 50 mAdc, I
B
3
.
0
–
)
c
d
A
m
0
.
5
=
(IC = –10 mAdc, I
B
–
)
P
N
P
(
)
c
d
A
m
0
.
1
–
=
–0.25
(IC = –50 mAdc, I
B
–
)
c
d
A
m
0
.
5
–
=
–0.4
V
e
g
a
tl
o
V
n
o
it
a
r
u
t
a
S
r
e
tt
i
m
E
–
e
s
a
B
BE(sat)
Vdc
(IC = 10 mAdc, I
B = 1.0 mAdc)
(NPN)
0.65
0.85
(IC = 50 mAdc, I
B
–
)
c
d
A
m
0
.
5
=
0.95
(IIC = –10 mAdc, I
B = –1.0 mAdc)
(PNP)
–0.65
–0.85
(IC = –50 mAdc, I
B
–
)
c
d
A
m
0
.
5
–
=
–0.95
2. Pulse Test: Pulse Width < 300 µs; Duty Cycle <2.0%.
2008. 03. 10
2/12
FFB3946D
Revision No : 0



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