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FFB3946D Datasheet(PDF) 3 Page - First Silicon Co., Ltd

Part # FFB3946D
Description  Dual General Purpose Transistors
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FFB3946D Datasheet(HTML) 3 Page - First Silicon Co., Ltd

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ELECTRICALCHARACTERISTICS (TA=25°C unless otherwise noted)
x
a
M
n
i
M
l
o
b
m
y
S
c
it
si
r
e
t
c
a
r
a
h
C
Unit
SMALL–SIGNALCHARACTERISTICS
f
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
–
n
i
a
G
–
t
n
e
rr
u
C
T
MHz
(IC = 10 mAdc, V CE = 20 Vdc, f = 100 MHz)
(NPN)
300
–
(IC = –10 mAdc, V CE = –20 Vdc, f = 100 MHz)
(PNP)
250
–
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
t
u
O
obo
pF
(VCB = 5.0 Vdc, I E = 0, f = 1.0 MHz)
(NPN)
–
4.0
(VCB = –5.0 Vdc, I E = 0, f = 1.0 MHz)
(PNP)
–
4.5
C
e
c
n
a
ti
c
a
p
a
C
t
u
p
n
I
ibo
pF
(VEB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
(NPN)
–
8.0
(VEB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
(PNP)
–
10.0
I
h
e
c
n
a
d
e
p
m
I
t
u
p
n
ie
kΩ
(V
CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(NPN)
1.0
10
(V
CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
(PNP)
2.0
12
h
o
it
a
R
k
c
a
b
d
e
e
F
e
g
a
tl
o
V
re
X10
–4
(V
CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(NPN)
0.5
8.0
(V
CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
(PNP)
0.1
10
h
n
i
a
G
t
n
e
rr
u
C
l
a
n
g
i
S
–
ll
a
m
S
FE
–
(V
CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(NPN)
100
400
(V
CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
(PNP)
100
400
h
e
c
n
a
tt
i
m
d
A
t
u
p
t
u
O
oe
µ
mhos
(V
CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
(NPN)
1.0
40
(V
CE = –10 Vdc, I C = –1.0 mAdc, f = 1.0 kHz)
(PNP)
3.0
60
B
d
F
N
e
r
u
g
i
F
e
si
o
N
(V
CE=5.0 Vdc,I C=100 µAdc, R S=1.0 k Ω, f=1.0kHz) (NPN)
–
5.0
(V
CE=–5.0 Vdc,I C=–100 µAdc, R S=1.0 k Ω, f=1.0kHz) (PNP)
–
4.0
SWITCHING CHARACTERISTICS
Delay Time
(V
CC = 3.0 Vdc, V BE = –0.5 Vdc)
(NPN)
t
d
–
35
(V
CC = –3.0 Vdc, V BE = 0.5 Vdc)
(PNP)
–
35
ns
Rise Time
(I
C = 10 mAdc, I B1 = 1.0 mAdc)
(NPN)
t
r
–
35
(I
C = –10 mAdc, I B1 = –1.0 mAdc)
(PNP)
–
35
Storage Time (V
CC = 3.0 Vdc, I C = 10 mAdc)
(NPN)
t
s
–
200
(V
CC = –3.0 Vdc, I C = –10 mAdc)
(PNP)
–
225
ns
Fall Time
(I
B1 = IB2 = 1.0 mAdc)
(NPN)
t
f
–
50
(I
B1 = IB2 = –1.0 mAdc)
(PNP)
–
75
2008. 03. 10
3/12
FFB3946D
Revision No : 0



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