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M58LT128GS Datasheet(PDF) 19 Page - STMicroelectronics

Part # M58LT128GS
Description  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GS Datasheet(HTML) 19 Page - STMicroelectronics

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M58LT128GST, M58LT128GSB
4 Command Interface
19/98
4.1
Read Array command
The Read Array command returns the addressed bank to Read Array mode.
One Bus Write cycle is required to issue the Read Array command. Once a bank is in Read
Array mode, subsequent read operations will output the data from the memory array.
A Read Array command can be issued to any banks while programming or erasing in another
bank.
If the Read Array command is issued to a bank currently executing a program or erase
operation, the bank will return to Read Array mode but the program or erase operation will
continue, however the data output from the bank is not guaranteed until the program or erase
operation has finished. The read modes of other banks are not affected.
4.2
Read Status Register command
The device contains a Status Register that is used to monitor program or erase operations.
The Read Status Register command is used to read the contents of the Status Register for the
addressed bank.
One Bus Write cycle is required to issue the Read Status Register command. Once a bank is in
Read Status Register mode, subsequent read operations will output the contents of the Status
Register.
The Status Register data is latched on the falling edge of the Chip Enable or Output Enable
signals. Either Chip Enable or Output Enable must be toggled to update the Status Register
data
The Read Status Register command can be issued at any time, even during program or erase
operations. The Read Status Register command will only change the read mode of the
addressed bank. The read modes of other banks are not affected. Only Asynchronous Read
and Single Synchronous Read operations should be used to read the Status Register. A Read
Array command is required to return the bank to Read Array mode.
See Table 9 for the description of the Status Register Bits.
4.3
Read Electronic Signature command
The Read Electronic Signature command is used to read the Manufacturer and Device Codes,
the Protection Status of the addressed bank, the Configuration Register and the Protection
Register.
One Bus Write cycle is required to issue the Read Electronic Signature command. Once a bank
is in Read Electronic Signature mode, subsequent read operations in the same bank will output
the Manufacturer Code, the Device Code, the Protection Status of the addressed bank, or the
Configuration Register (see Table 7).
The Read Electronic Signature command can be issued at any time, even during program or
erase operations, except during Protection Register Program operations. Dual operations
between the Parameter bank and the Electronic Signature location are not allowed (see
Table 15: Dual Operation Limitations for details).
If a Read Electronic Signature command is issued to a bank that is executing a program or
erase operation the bank will go into Read Electronic Signature mode. Subsequent Bus Read



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