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M58LT128GS Datasheet(PDF) 27 Page - STMicroelectronics

Part # M58LT128GS
Description  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GS Datasheet(HTML) 27 Page - STMicroelectronics

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M58LT128GST, M58LT128GSB
4 Command Interface
27/98
The Read Electronic Signature command is required to read the updated contents of the
Configuration Register.
Table 5.
Standard Commands
Commands
Bus Operations(1)
1.
X = Don't Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic
Signature Data, QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA = Protection Register
Address, PRD = Protection Register Data, CRD=Configuration Register Data.
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
X
70h
Read
BKA(2)
2.
Must be same bank as in the first cycle. The signature addresses are listed in Table 7
SRD
Read Electronic Signature
1+
Write
X
90h
Read
BKA(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or
BA(3)
3.
Any address within the bank can be used.
20h
Write
BA
D0h
Program
2
Write
BKA or
WA(3)
40h or 10h
Write
WA
PD
Buffer Program
n+4
Write
BA
E8h
Write
BA
n
Write
PA1
PD1
Write
PA2
PD2
Write
PAn+1
(4)
4.
n+1 is the number of Words to be programmed.
PDn+1
(4)
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Program/Erase Resume
1
Write
X
D0h
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h



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