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VSC7440 Datasheet(PDF) 409 Page - Microsemi Corporation |
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VSC7440 Datasheet(HTML) 409 Page - Microsemi Corporation |
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409 / 444 page ![]() Electrical Specifications VMDS-10492 VSC7440 Datasheet Revision 4.2 392 All SI signals comply with the specifications shown in the following table. The SI input timing requirements are requested at the pins of the device. Figure 140 • SI_DO Disable Test Circuit 6.2.11 DDR SDRAM Interface This section provides the AC characteristics for the DDR3 and DDR3L SDRAM interface. The following illustration shows the DDR3/DDR3L SDRAM input timing diagram. Figure 141 • DDR SDRAM Input Timing Diagram Table 311 • SI Timing Specifications for Slave Mode Parameter Symbol Minimum Maximum Unit Condition Clock frequency ƒ 25 MHz Clock cycle time tC 40 ns Clock time high tW(CH) 16 ns Clock time low tW(CL) 16 ns SI_DI setup time to clock tSU(DI) 4ns SI_DI hold time from clock tH(DI) 4ns Enable active before first clock tLEAD 10 ns Enable inactive after clock (input cycle)1 1. tLAG1 is defined only for write operations to the device, not for read operations. tLAG1 25 ns Enable inactive after clock (output cycle) tLAG2 See note2 2. The last rising edge on the clock is necessary for the external master to read in the data. The lag time depends on the necessary hold time on the external master data input. ns Enable inactive width tW(EH) 20 ns SI_DO valid after clock tV(C) 25 ns CL =30 pF. SI_DO hold time from clock tH(DO) 0ns CL =0 pF. SI_DO disable time3 3. Pin begins to float when a 300 mV change from the loaded VOH or VOL level occurs. tDIS1 20 ns See Figure 139, page 391. SI_DO disable time3 tDIS2 20 ns See Figure 139, page 391. 5 pF 3.3 V From Output Under Test 500 Ω 500 Ω tCLK t90 DDR_UDQSn/DDR_LDQSn DDR_UDQS/DDR_LDQS DDR_DQ[15:0] tDH tDS tDH tDS t90 |
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