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VSC7440 Datasheet(PDF) 409 Page - Microsemi Corporation

Part # VSC7440
Description  L2/L3 Enterprise Gigabit Ethernet Switch with 10 Gbps Links
PDF  444 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VSC7440 Datasheet(HTML) 409 Page - Microsemi Corporation

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Electrical Specifications
VMDS-10492 VSC7440 Datasheet Revision 4.2
392
All SI signals comply with the specifications shown in the following table. The SI input timing
requirements are requested at the pins of the device.
Figure 140 •
SI_DO Disable Test Circuit
6.2.11
DDR SDRAM Interface
This section provides the AC characteristics for the DDR3 and DDR3L SDRAM interface.
The following illustration shows the DDR3/DDR3L SDRAM input timing diagram.
Figure 141 •
DDR SDRAM Input Timing Diagram
Table 311 •
SI Timing Specifications for Slave Mode
Parameter
Symbol Minimum
Maximum
Unit
Condition
Clock frequency
ƒ
25
MHz
Clock cycle time
tC
40
ns
Clock time high
tW(CH)
16
ns
Clock time low
tW(CL)
16
ns
SI_DI setup time to clock
tSU(DI)
4ns
SI_DI hold time from clock
tH(DI)
4ns
Enable active before first clock
tLEAD
10
ns
Enable inactive after clock (input cycle)1
1.
tLAG1 is defined only for write operations to the device, not for read operations.
tLAG1
25
ns
Enable inactive after clock (output cycle) tLAG2
See note2
2.
The last rising edge on the clock is necessary for the external master to read in the data. The lag time depends on the necessary
hold time on the external master data input.
ns
Enable inactive width
tW(EH)
20
ns
SI_DO valid after clock
tV(C)
25
ns
CL =30 pF.
SI_DO hold time from clock
tH(DO)
0ns
CL =0 pF.
SI_DO disable time3
3.
Pin begins to float when a 300 mV change from the loaded VOH or VOL level occurs.
tDIS1
20
ns
See Figure 139, page 391.
SI_DO disable time3
tDIS2
20
ns
See Figure 139, page 391.
5 pF
3.3 V
From Output Under Test
500
Ω
500
Ω
tCLK
t90
DDR_UDQSn/DDR_LDQSn
DDR_UDQS/DDR_LDQS
DDR_DQ[15:0]
tDH
tDS
tDH
tDS
t90



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