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VSC7440 Datasheet(PDF) 410 Page - Microsemi Corporation

Part # VSC7440
Description  L2/L3 Enterprise Gigabit Ethernet Switch with 10 Gbps Links
PDF  444 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

VSC7440 Datasheet(HTML) 410 Page - Microsemi Corporation

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Electrical Specifications
VMDS-10492 VSC7440 Datasheet Revision 4.2
393
The following table lists the AC specifications for the DDR3 and DDR3L SDRAM input signals.
The following illustration shows the timing diagram for the DDR3 and DDR3L SDRAM outputs.
Figure 142 •
DDR SDRAM Output Timing Diagram
Table 312 •
DDR3/DDR3L SDRAM Input Signal AC Characteristics
Parameter
Symbol Minimum
Typical
Maximum
Unit Condition
DDR3 input voltage high
VIH(AC)
DDR_VREF +0.175
VDD_IODDR +0.3
V
DDR3 input voltage low
VIL(AC)
–0.3
DDR_VREF –0.175 V
DDR3 differential input
voltage
VID(AC)
0.4
VDD_IODDR
V
DDR3 differential
crosspoint voltage
VIX(AC)
0.5 × VDD_IODDR –
0.175
0.5 × VDD_IODDR +
0.175
V
DDR3L input voltage high
VIH(AC)
DDR_VREF +0.160
VDD_IODDR +0.3
V
DDR3L input voltage low
VIL(AC)
–0.3
DDR_VREF –0.160 V
DDR3L differential input
voltage
VID(AC)
0.4
VDD_IODDR
V
DDR3L differential
crosspoint voltage
VIX(AC)
0.5 × VDD_IODDR –
0.160
0.5 × VDD_IODDR +
0.160
V
DDR_DQ[7:0] input setup
time relative to
DDR_LDQS1
1.
These requirements are dependent on the operation frequency of the DDR SDRAM interface. Stated limits are for DDR3-800.
tDS
350
ps
DDR_DQ[15:8] input setup
time relative to
DDR_UDQS1
tDS
350
ps
DDR_DQ[7:0] input hold
time relative to
DDR_LDQS1
tDH
250
ps
DDR_DQ[15:8] input hold
time relative to
DDR_UDQS1
tDH
250
ps
Quarter period offset from
clock edge
t90
0.25 × tCLK
tCLK =3.2 ns
tCLK
DDR_CKn
DDR_CK
DDR_DQ[15:0]
DDR_LDM/UDM
DDR_LDQS
DDR_UDQS
R_Addr, DDR_BA/DDR_CKE,
DDR_nRAS, DDR_nCAS,
DR_nWE, DDR_nCS
tDQSPRE
tDQSPST
tCLKDQS
tAH/CH
tAS/CS
tDS tDH
tDS tDH



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