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7.4 Thermal Information

THERMAL METRIC(1)

INA848

UNIT

D (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

119.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

66.3

°C/W

RθJB

Junction-to-board thermal resistance

61.9

°C/W

ψJT

Junction-to-top characterization parameter

20.5

°C/W

ψJB

Junction-to-board characterization parameter

61.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.5 Electrical Characteristics

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, G = 2000 (fixed) and VREF = 0 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

VOSI

Input offset voltage

±10

±35

µV

TA = –40°C to +125°C(1)

±80

Input offset voltage drift

TA = –40°C to +125°C

±0.1

±0.45

µV/°C

PSRR

Power-supply rejection

ratio

±4 V ≤ (VS) ≤ ±18 V

125

150

Zin

Input impedance

1 || 7

GΩ || pF

RFI filter, –3-dB

frequency

250

MHz

VCM

Operating input voltage(3)

VS = ±4 V to ±18 V

(–VS) + 2.5

(+VS) – 2.5

VS = ±4 V to ±18 V, TA = –40°C to +125°C

See Figure 7-9

CMRR

Common-mode rejection

ratio

At dc to 60 Hz, RTI

(–VS) + 2.5 V < VCM < (+VS) – 2.5 V

132

150

At 50 kHz, RTI

(–VS) + 2.5 V < VCM < (+VS) – 2.5 V

110

BIAS CURRENT

Input bias current

VCM = VS / 2

Input bias current dift

TA = –40°C to +125°C

pA/

℃

IOS

Input offset current

VCM = VS / 2

Input offset current drift

TA = –40°C to +125°C

pA/

℃

NOISE VOLTAGE

eNI

Input voltage noise

f = 1 kHz, RS = 0 Ω

1.3

1.5(2)

nV/√Hz

fB = 0.1 Hz to 10 Hz, RS = 0 Ω

nVPP

Input current noise

f = 1 kHz

1.85

pA/√Hz

fB = 0.1 Hz to 10 Hz

pAPP

GAIN

First stage gain

200

V/V

Subtractor stage gain

V/V

Total gain error

VO = ±10 V

0.05

0.15(1) (2)

Total gain drift

TA = –40°C to +125°C

5(1) (2)

ppm/°C

Total gain nonlinearity

VO = –10 V to +10 V, no load

ppm

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INA848

SBOS946 – SEPTEMBER 2020

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