INA849 datasheet(6/26 Pages) TI

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7.5 Electrical Characteristics (continued)

at TA = 25°C, VS = ±15 V, RL = 10 kΩ, connected to ground, VREF = 0 V, VCM = 0 V, and G = 1 (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

NOISE VOLTAGE

eNI

Input stage voltage noise(6)

f = 1 kHz, G = 1000,

RS = 0 Ω

nV/√Hz

fB = 0.1 Hz to 10 Hz, G = 1000,

RS = 0 Ω

0.1

µVPP

eNO

Output stage voltage noise(6)

f = 1 kHz, RS = 0 Ω

nV/√Hz

fB = 0.1 Hz to 10 Hz,

RS = 0 Ω

4.3

µVPP

Current noise

f = 1 kHz

1.5

pA/√Hz

fB = 0.1 Hz to 10 Hz

100

pAPP

GAIN

Gain equation

1 + (6 kΩ / RG)

V/V

Gain

10000

V/V

Gain error

G = 1, VO = ±10 V

±0.005

±0.025

G = 10, VO = ±10 V

±0.025

±0.1

G = 100, VO = ±10 V

±0.025

±0.1

G = 1000, VO = ±10 V

±0.05

Gain drift(5)

G = 1, TA = –40°C to +125°C

±5

ppm/°C

G > 1, TA = –40°C to +125°C

±35

Gain nonlinearity

G = 1 to 10, VO = –10 V to +10 V

ppm

G = 100, VO = –10 V to +10 V

G = 1000, VO = –10 V to +10 V

OUTPUT

Voltage swing

RL = 10 kΩ

(V–) + 0.15

(V+) – 0.15

Load capacitance stability

200

Open-loop output impedance

f = 1 MHz

Ω

ISC

Short-circuit current

Continuous to VS / 2

±34

FREQUENCY RESPONSE

Bandwidth, –3 dB

G = 1

MHz

G = 10

G = 100

G = 1000

1.25

Slew rate

G = 1, VO = ±10 V

V/µs

Settling time

0.01%, G = 1 to 100,

VSTEP = 10 V

0.37

µs

0.01%, G = 1000,

VSTEP = 10 V

0.89

0.001%, G = 1 to 100,

VSTEP = 10 V

0.95

0.001%, G = 1000,

VSTEP = 10 V

1.81

INA849

SBOS945 – NOVEMBER 2020

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