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OPA191 Datasheet(PDF) 29 Page - Texas Instruments |
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OPA191 Datasheet(HTML) 29 Page - Texas Instruments |
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29 / 57 page ![]() Power-Supply ESD Cell 100 Ÿ 100 Ÿ VSS VDD IN± IN+ + ± R1 RS RF TVS TVS RL VIN +VS ±VS OPAx191 ID + ± 29 OPA191, OPA2191, OPA4191 www.ti.com SBOS701C – DECEMEBER 2015 – REVISED OCTOBER 2019 Product Folder Links: OPA191 OPA2191 OPA4191 Submit Documentation Feedback Copyright © 2015–2019, Texas Instruments Incorporated 8.3.7 Electrical Overstress Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress (EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin. Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from accidental ESD events both before and during product assembly. Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is helpful. See Figure 60 for an illustration of the ESD circuits contained in the OPAx191 (indicated by the dashed line area). The ESD protection circuitry involves several current-steering diodes connected from the input and output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain inactive during normal circuit operation. Figure 60. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application |
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