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LM5145 Datasheet(PDF) 30 Page - Texas Instruments |
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LM5145 Datasheet(HTML) 30 Page - Texas Instruments |
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30 / 62 page ![]() with its adaptive gate drive timing, minimizes body diode conduction losses when both MOSFETs are off. Such losses scale directly with switching frequency. In high step-down ratio applications, the low-side MOSFET carries the current for a large portion of the switching period. Therefore, to attain high efficiency, it is critical to optimize the low-side MOSFET for low RDS(on). In cases where the conduction loss is too high or the target RDS(on) is lower than available in a single MOSFET, connect two low-side MOSFETs in parallel. The total power dissipation of the low-side MOSFET is the sum of the losses due to channel conduction, body diode conduction, and typically one-third of the net loss attributed to body diode reverse recovery. The LM5145-Q1 is well suited to drive TI's portfolio of NexFET™ power MOSFETs. 9.1.3 Control Loop Compensation The poles and zeros inherent to the power stage and compensator are respectively illustrated by red and blue dashed rings in the schematic embedded in Table 9-2. The compensation network typically employed with voltage-mode control is a Type-III circuit with three poles and two zeros. One compensator pole is located at the origin to realize high DC gain. The normal compensation strategy uses two compensator zeros to counteract the LC double pole, one compensator pole located to nullify the output capacitor ESR zero, with the remaining compensator pole located at one-half switching frequency to attenuate high frequency noise. The resistor divider network to FB determines the desired output voltage. Note that the lower feedback resistor, RFB2, has no impact on the control loop from an AC standpoint because the FB node is the input to an error amplifier and is effectively at AC ground. Hence, the control loop is designed irrespective of output voltage level. The proviso here is the necessary output capacitance derating with bias voltage and temperature. Table 9-2. Buck Regulator Poles and Zeros FB COMP VIN VOUT GND Adaptive Gate Driver RFB2 RC2 CC3 CC2 RFB1 RC1 CC1 VREF LF D PWM Comparator PWM Ramp &p1 &z1 RESR &p2 &z2 &o &ESR Modulator Compensator Power Stage RL IOUT + + VRAMP Error Amp &L RDAMP COUT Q2 Q1 POWER STAGE POLES POWER STAGE ZEROS COMPENSATOR POLES COMPENSATOR ZEROS o ESR L F OUT ESR DAMP F OUT 1 1 R R L C 1 R R 1 L C Z § · ˜ ¨ ¸ © ¹ # ˜ (1) (2) ESR ESR OUT 1 R C Z ˜ p1 C1 C1 C2 C1 C2 1 1 R (C C ) R C Z # ˜ ˜ z1 C1 C1 1 R C Z ˜ F L DAMP L R Z p2 C2 C3 1 R C Z ˜ ˜ z2 FB1 C2 C3 1 (R R ) C Z (1) RESR represents the ESR of the output capacitor COUT. (2) RDAMP = D · RDS(on)high-side + (1–D) · RDS(on) low-side + RDCR, shown as a lumped element in the schematic, represents the effective series damping resistance. The small-signal open-loop response of a buck regulator is the product of modulator, power train and compensator transfer functions. The power stage transfer function can be represented as a complex pole pair LM5145-Q1 SNVSBU9 – JUNE 2021 www.ti.com 30 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: LM5145-Q1 |
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