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MPC5676R Datasheet(PDF) 21 Page - NXP Semiconductors |
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MPC5676R Datasheet(HTML) 21 Page - NXP Semiconductors |
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21 / 111 page ![]() Electrical Characteristics MPC5676R Microcontroller Data Sheet, Rev. 4 Freescale Semiconductor 21 27 Operating Current VDDE/VDDEH 23 Supplies VDDE2 VDDEH1 VDDEH3 VDDEH4 VDDEH5 VDDEH6 VDDEH7 IDD2 IDD1 IDD3 IDD4 IDD5 IDD6 IDD7 — — — — — — — note23 mA mA mA mA mA mA mA 28 Fast I/O Weak Pull Up/Down Current24 3.0 V–3.6 V IACT_F 42 158 A 29 Medium I/O Weak Pull Up/Down Current25 3.0 V–3.6 V 4.5 V–5.5 V IACT_S 15 35 95 200 A A 30 I/O Input Leakage Current26 IINACT_D –2.5 2.5 A 31 DC Injection Current (per pin) IIC –1.0 1.0 mA 32 Analog Input Current, Channel Off27, AN[0:7], AN38, AN39 Analog Input Current, Channel Off, all other analog inputs AN[x] = -/+ 150nA IINACT_A –250 –150 250 150 nA nA 33 VSS Differential Voltage VSS –VSSA –100 100 mV 34 Analog Reference Low Voltage VRL VSSA VSSA +100 mV 35 VRL Differential Voltage VRL –VSSA –100 100 mV 36 Analog Reference High Voltage VRH VDDA –100 VDDA mV 37 VREF Differential Voltage VRH –VRL 4.75 5.25 V 38 VSSSYN to VSS Differential Voltage VSSSYN –VSS –100 100 mV 39 Operating Temperature Range—Ambient (Packaged) TA (TL to TH) –40.0 125.0 C 40 Slew rate on power supply pins — — 25 V/ms 41 Weak Pull-Up/Down Resistance28,29 200 k Option RPUPD200K 130 280 k 42 Weak Pull-Up/Down Resistance28,29 100 k Option RPUPD100K 65 140 k 43 Weak Pull-Up/Down Resistance28 (5 k Option) 5 V ± 10% supply 3.3 V ± 10% supply RPUPD5K 1.4 1.7 5.2 7.7 k 44 Pull-Up/Down Resistance Matching Ratios (100K/200K) (Pull-up and pull-down resistances both enabled and settings are equal) RPUPDMATCH –2.5 2.5 % 1 These specifications are design targets and subject to change per device characterization. 2 Voltage overshoots during a high-to-low or low-to-high transition must not exceed 10 seconds per instance. 3 2.0 V for 10 hours cumulative time, 1.2 V +10% for time remaining. Table 13. DC Electrical Specifications1 (continued) Spec Characteristic Symbol Min Max Unit |
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